AP60P20Q MOSFET. Datasheet pdf. Equivalent
Type Designator: AP60P20Q
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 43 nS
Cossⓘ - Output Capacitance: 572 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: PDFN3X3-8L
AP60P20Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP60P20Q Datasheet (PDF)
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