AP68N06G PDF and Equivalents Search

 

AP68N06G Specs and Replacement

Type Designator: AP68N06G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 43 nS

Cossⓘ - Output Capacitance: 185 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: DFN5X6

AP68N06G substitution

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AP68N06G datasheet

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AP68N06G

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AP68N06G

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AP68N06G

AP68N04DF 40V N-Channel Enhancement Mode MOSFET Description The AP68N04DF uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =68A DS D R ... See More ⇒

 8.2. Size:1359K  cn apm
ap68n04nf.pdf pdf_icon

AP68N06G

AP68N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP68N04NF uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =68A DS D R ... See More ⇒

Detailed specifications: AP3908GD, AP3908QD, AP3910GD, AP4008QD, AP4085G, AP4822QD, AP4910GD, AP60P20Q, IRF840, AP80N04G, AP80N04Q, AP90N03Q, AP90P03G, AP90P03Q, APG077N01G, APG095N01G, ASDM30N55E-R

Keywords - AP68N06G MOSFET specs

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