All MOSFET. AP68N06G Datasheet

 

AP68N06G Datasheet and Replacement


   Type Designator: AP68N06G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 43 nS
   Cossⓘ - Output Capacitance: 185 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: DFN5X6
 

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AP68N06G Datasheet (PDF)

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AP68N06G

 8.1. Size:1378K  cn apm
 ap68n04df.pdf pdf_icon

AP68N06G

AP68N04DF 40V N-Channel Enhancement Mode MOSFET Description The AP68N04DF uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =68A DS DR

 8.2. Size:1359K  cn apm
 ap68n04nf.pdf pdf_icon

AP68N06G

AP68N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP68N04NF uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =68A DS DR

Datasheet: AP3908GD , AP3908QD , AP3910GD , AP4008QD , AP4085G , AP4822QD , AP4910GD , AP60P20Q , IRF840 , AP80N04G , AP80N04Q , AP90N03Q , AP90P03G , AP90P03Q , APG077N01G , APG095N01G , ASDM30N55E-R .

History: HY3003B | RU13N65R | D4N65 | SEFM350 | SUD20P15-306 | 2SK3872-01S | NTR0202PLT1G

Keywords - AP68N06G MOSFET datasheet

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