AP68N06G Specs and Replacement
Type Designator: AP68N06G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 43 nS
Cossⓘ - Output Capacitance: 185 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: DFN5X6
AP68N06G substitution
- MOSFET ⓘ Cross-Reference Search
AP68N06G datasheet
ap68n04df.pdf
AP68N04DF 40V N-Channel Enhancement Mode MOSFET Description The AP68N04DF uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =68A DS D R ... See More ⇒
ap68n04nf.pdf
AP68N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP68N04NF uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =68A DS D R ... See More ⇒
Detailed specifications: AP3908GD, AP3908QD, AP3910GD, AP4008QD, AP4085G, AP4822QD, AP4910GD, AP60P20Q, IRF840, AP80N04G, AP80N04Q, AP90N03Q, AP90P03G, AP90P03Q, APG077N01G, APG095N01G, ASDM30N55E-R
Keywords - AP68N06G MOSFET specs
AP68N06G cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: AP9870GH | AP6679GS
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