All MOSFET. AP80N04G Datasheet

 

AP80N04G Datasheet and Replacement


   Type Designator: AP80N04G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 187 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: PDFN5X6-8L
 

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AP80N04G Datasheet (PDF)

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AP80N04G

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AP80N04G

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AP80N04G

AP80N04DF 40V N-Channel Enhancement Mode MOSFET Description The AP80N04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =80 A DS DR

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AP80N04G

AP80N04D 40V N-Channel Enhancement Mode MOSFET Description The AP80N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =80 A DS DR

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Datasheet: AP3908QD , AP3910GD , AP4008QD , AP4085G , AP4822QD , AP4910GD , AP60P20Q , AP68N06G , 20N60 , AP80N04Q , AP90N03Q , AP90P03G , AP90P03Q , APG077N01G , APG095N01G , ASDM30N55E-R , ASDM30N65E-R .

Keywords - AP80N04G MOSFET datasheet

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