All MOSFET. AP80N04Q Datasheet

 

AP80N04Q Datasheet and Replacement


   Type Designator: AP80N04Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 21 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 187 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: PDFN3X3-8L
 

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AP80N04Q Datasheet (PDF)

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AP80N04Q

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AP80N04Q

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AP80N04Q

AP80N03GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30VD Fast Switching Characteristic RDS(ON) 8m Simple Drive Requirement ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAP80N03 series are from Advanced Power innovated design and siliconGprocess technology to achieve the low

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 ap80n08nf.pdf pdf_icon

AP80N04Q

AP80N08NF 80V N- Channel Enhancement Mode MOSFET Description The AP80N08NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 80V I =80A DS DR

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Datasheet: AP3910GD , AP4008QD , AP4085G , AP4822QD , AP4910GD , AP60P20Q , AP68N06G , AP80N04G , IRF540N , AP90N03Q , AP90P03G , AP90P03Q , APG077N01G , APG095N01G , ASDM30N55E-R , ASDM30N65E-R , ASDM30P11TD-R .

History: AOB29S50 | TMAN8N80 | 2SK3818 | AP2307GN-HF | 45N06 | 2SK3819 | FDS89141

Keywords - AP80N04Q MOSFET datasheet

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