AP80N04Q Specs and Replacement
Type Designator: AP80N04Q
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 21 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 187 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: PDFN3X3-8L
AP80N04Q substitution
- MOSFET ⓘ Cross-Reference Search
AP80N04Q datasheet
Detailed specifications: AP3910GD, AP4008QD, AP4085G, AP4822QD, AP4910GD, AP60P20Q, AP68N06G, AP80N04G, IRF540N, AP90N03Q, AP90P03G, AP90P03Q, APG077N01G, APG095N01G, ASDM30N55E-R, ASDM30N65E-R, ASDM30P11TD-R
Keywords - AP80N04Q MOSFET specs
AP80N04Q cross reference
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AP80N04Q replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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