All MOSFET. AP80N04Q Datasheet

 

AP80N04Q Datasheet and Replacement


   Type Designator: AP80N04Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 21 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 187 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: PDFN3X3-8L
 

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AP80N04Q Datasheet (PDF)

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AP80N04Q

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AP80N04Q

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AP80N04Q

AP80N03GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30VD Fast Switching Characteristic RDS(ON) 8m Simple Drive Requirement ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAP80N03 series are from Advanced Power innovated design and siliconGprocess technology to achieve the low

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AP80N04Q

AP80N30WRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 300V Lower On-resistance RDS(ON) 66m High Speed Switching ID 36AGSDescriptionAP80N30 from APEC provide the designer with the best combination offast switching, low on-resistance and cost-effectiveness.GThe TO-3P package is

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Datasheet: AP3910GD , AP4008QD , AP4085G , AP4822QD , AP4910GD , AP60P20Q , AP68N06G , AP80N04G , IRF540 , AP90N03Q , AP90P03G , AP90P03Q , APG077N01G , APG095N01G , ASDM30N55E-R , ASDM30N65E-R , ASDM30P11TD-R .

History: IRFSL3107PBF | AON6206

Keywords - AP80N04Q MOSFET datasheet

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