APG077N01G MOSFET. Datasheet pdf. Equivalent

   Type Designator: APG077N01G
   Marking Code: G077N01G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 105 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30 nC
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 362 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0077 Ohm
   Package: PDFN5X6-8L

APG077N01G Transistor Equivalent Substitute - MOSFET Cross-Reference Search