APG077N01G Specs and Replacement
Type Designator: APG077N01G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 105 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 362 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0077 Ohm
Package: PDFN5X6-8L
APG077N01G substitution
- MOSFET ⓘ Cross-Reference Search
APG077N01G datasheet
Detailed specifications: AP4910GD, AP60P20Q, AP68N06G, AP80N04G, AP80N04Q, AP90N03Q, AP90P03G, AP90P03Q, IRFZ44, APG095N01G, ASDM30N55E-R, ASDM30N65E-R, ASDM30P11TD-R, ASDM30P30CTD-R, ASDM40N52E-R, AUIRFN8405TR, CJAC100SN08U
Keywords - APG077N01G MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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