APG077N01G Datasheet and Replacement
Type Designator: APG077N01G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 105 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 362 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0077 Ohm
Package: PDFN5X6-8L
APG077N01G substitution
APG077N01G Datasheet (PDF)
Datasheet: AP4910GD , AP60P20Q , AP68N06G , AP80N04G , AP80N04Q , AP90N03Q , AP90P03G , AP90P03Q , IRFZ44 , APG095N01G , ASDM30N55E-R , ASDM30N65E-R , ASDM30P11TD-R , ASDM30P30CTD-R , ASDM40N52E-R , AUIRFN8405TR , CJAC100SN08U .
History: IPD060N03L
Keywords - APG077N01G MOSFET datasheet
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History: IPD060N03L
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