AUIRFN8405TR MOSFET. Datasheet pdf. Equivalent

   Type Designator: AUIRFN8405TR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id|ⓘ - Maximum Drain Current: 187 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 78 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 758 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: PQFN5X6

AUIRFN8405TR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AUIRFN8405TR Datasheet (PDF)

..1. Size:561K 1
auirfn8405tr.pdf

AUTOMOTIVE GRADE AUIRFN8405 Features HEXFET POWER MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) typ. 1.6m Fast Switching Repetitive Avalanche Allowed up to Tjmax max 2.0m Lead-Free, RoHS Compliant ID (Silicon Limited) 187A Automotive Qualified *

4.1. Size:576K international rectifier
auirfn8405.pdf

4.2. Size:561K infineon
auirfn8405.pdf

5.1. Size:609K international rectifier
auirfn8401.pdf

AUTOMOTIVE GRADE AUIRFN8401 Features HEXFET POWER MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) typ. 3.6m Fast Switching Repetitive Avalanche Allowed up to Tjmax max 4.6m Lead-Free, RoHS Compliant ID (Silicon Limited) 84A Automotive Qualified * De

5.2. Size:606K international rectifier
auirfn8403.pdf

AUTOMOTIVE GRADE AUIRFN8403 Features HEXFET POWER MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) typ. 2.5m Fast Switching Repetitive Avalanche Allowed up to Tjmax max 3.3m Lead-Free, RoHS Compliant ID (Silicon Limited) 123A Automotive Qualified *

5.3. Size:611K infineon
auirfn8401.pdf