DMTH6010LPSQ-13 Specs and Replacement

Type Designator: DMTH6010LPSQ-13

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.3 nS

Cossⓘ - Output Capacitance: 746 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: POWERDI5060-8

DMTH6010LPSQ-13 substitution

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DMTH6010LPSQ-13 datasheet

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 dmth6010lpsq-13.pdf pdf_icon

DMTH6010LPSQ-13

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 2.1. Size:536K  diodes
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DMTH6010LPSQ-13

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 5.1. Size:539K  diodes
 dmth6010lk3.pdf pdf_icon

DMTH6010LPSQ-13

Green DMTH6010LK3 60V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID Max Excellent Qgd x RDS (ON) Product (FOM) BVDSS RDS(ON) Max TC = +25 C Advanced Technology for DC/DC Converters 8m @ VGS = 10V 70A 60V Small form factor thermally efficient package enables hi... See More ⇒

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Detailed specifications: DMT31M6LPS-13, DMT32M5LPS-13, DMT6004LPS-13, DMT6005LPS-13, DMT6009LPS-13, DMT6016LPS-13, DMTH4007LPS-13, DMTH6002LPS-13, 12N60, DMTH8003SPS-13, DMTH8012LPSW-13, EMB06N03V, FDMS86380-F085, G12P03D3, G16P03D3, GL150N03AD, GL35N03AD3

Keywords - DMTH6010LPSQ-13 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs