All MOSFET. EMB06N03V Datasheet

 

EMB06N03V Datasheet and Replacement


   Type Designator: EMB06N03V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 26 V
   |Id| ⓘ - Maximum Drain Current: 26 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 328 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: EDFN3X3
 

 EMB06N03V substitution

   - MOSFET ⓘ Cross-Reference Search

 

EMB06N03V Datasheet (PDF)

 ..1. Size:206K  1
 emb06n03v.pdf pdf_icon

EMB06N03V

EMB06N03VNChannelLogicLevelEnhancementModeFieldEffectTransistorProductSummary:DBVDSS30VRDSON(MAX.)6mID26AGSUIS,Rg100%TestedPbFreeLeadPlating&HalogenFreeABSOLUTEMAXIMUMRATINGS(TC=25CUnlessOtherwiseNoted)PARAMETERS/TESTCONDITIONSSYMBOLLIMITSUNITGateSourceVoltageVGS20

Datasheet: DMT6005LPS-13 , DMT6009LPS-13 , DMT6016LPS-13 , DMTH4007LPS-13 , DMTH6002LPS-13 , DMTH6010LPSQ-13 , DMTH8003SPS-13 , DMTH8012LPSW-13 , AON7506 , FDMS86380-F085 , G12P03D3 , G16P03D3 , GL150N03AD , GL35N03AD3 , GT080N10D5 , GT110N06D5 , HGQ065NE4A .

History: VBZE10N20 | RJK03M3DPA

Keywords - EMB06N03V MOSFET datasheet

 EMB06N03V cross reference
 EMB06N03V equivalent finder
 EMB06N03V lookup
 EMB06N03V substitution
 EMB06N03V replacement

 

 
Back to Top

 


 
.