All MOSFET. EMB06N03V Datasheet

 

EMB06N03V MOSFET. Datasheet pdf. Equivalent


   Type Designator: EMB06N03V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 26 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 26 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 34.6 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 328 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: EDFN3X3

 EMB06N03V Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

EMB06N03V Datasheet (PDF)

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 emb06n03v.pdf

EMB06N03V EMB06N03V

EMB06N03VNChannelLogicLevelEnhancementModeFieldEffectTransistorProductSummary:DBVDSS30VRDSON(MAX.)6mID26AGSUIS,Rg100%TestedPbFreeLeadPlating&HalogenFreeABSOLUTEMAXIMUMRATINGS(TC=25CUnlessOtherwiseNoted)PARAMETERS/TESTCONDITIONSSYMBOLLIMITSUNITGateSourceVoltageVGS20

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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