EMB06N03V Datasheet and Replacement
Type Designator: EMB06N03V
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 26 V
|Id| ⓘ - Maximum Drain Current: 26 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 328 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: EDFN3X3
EMB06N03V substitution
EMB06N03V Datasheet (PDF)
emb06n03v.pdf

EMB06N03VNChannelLogicLevelEnhancementModeFieldEffectTransistorProductSummary:DBVDSS30VRDSON(MAX.)6mID26AGSUIS,Rg100%TestedPbFreeLeadPlating&HalogenFreeABSOLUTEMAXIMUMRATINGS(TC=25CUnlessOtherwiseNoted)PARAMETERS/TESTCONDITIONSSYMBOLLIMITSUNITGateSourceVoltageVGS20
Datasheet: DMT6005LPS-13 , DMT6009LPS-13 , DMT6016LPS-13 , DMTH4007LPS-13 , DMTH6002LPS-13 , DMTH6010LPSQ-13 , DMTH8003SPS-13 , DMTH8012LPSW-13 , IRF1407 , FDMS86380-F085 , G12P03D3 , G16P03D3 , GL150N03AD , GL35N03AD3 , GT080N10D5 , GT110N06D5 , HGQ065NE4A .
History: MTP2N85 | LND06R079 | KP749A | IRFF130 | G12P03D3 | CS18N50W | MTB12N03Q8
Keywords - EMB06N03V MOSFET datasheet
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History: MTP2N85 | LND06R079 | KP749A | IRFF130 | G12P03D3 | CS18N50W | MTB12N03Q8



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