EMB06N03V Specs and Replacement

Type Designator: EMB06N03V

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 26 V

|Id| ⓘ - Maximum Drain Current: 26 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 328 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: EDFN3X3

EMB06N03V substitution

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EMB06N03V datasheet

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EMB06N03V

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Detailed specifications: DMT6005LPS-13, DMT6009LPS-13, DMT6016LPS-13, DMTH4007LPS-13, DMTH6002LPS-13, DMTH6010LPSQ-13, DMTH8003SPS-13, DMTH8012LPSW-13, IRFB3607, FDMS86380-F085, G12P03D3, G16P03D3, GL150N03AD, GL35N03AD3, GT080N10D5, GT110N06D5, HGQ065NE4A

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.