All MOSFET. G12P03D3 Datasheet

 

G12P03D3 Datasheet and Replacement


   Type Designator: G12P03D3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 181 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: DFN3X3-8L
 

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G12P03D3 Datasheet (PDF)

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G12P03D3

GOFORD G12P03D3P-Channel Trench MOSFETDescriptionThe G12P03D3 uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General Features VDS -30V Schematic diagram ID (at VGS = -10V) -12A RDS(ON) (at VGS = -10V)

Datasheet: DMT6016LPS-13 , DMTH4007LPS-13 , DMTH6002LPS-13 , DMTH6010LPSQ-13 , DMTH8003SPS-13 , DMTH8012LPSW-13 , EMB06N03V , FDMS86380-F085 , AO4407 , G16P03D3 , GL150N03AD , GL35N03AD3 , GT080N10D5 , GT110N06D5 , HGQ065NE4A , HSBA3016 , HSBA4115 .

History: ISZ019N03L5S | IRLML9303

Keywords - G12P03D3 MOSFET datasheet

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