G12P03D3 Specs and Replacement

Type Designator: G12P03D3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 181 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: DFN3X3-8L

G12P03D3 substitution

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G12P03D3 datasheet

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G12P03D3

GOFORD G12P03D3 P-Channel Trench MOSFET Description The G12P03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features VDS -30V Schematic diagram ID (at VGS = -10V) -12A RDS(ON) (at VGS = -10V) ... See More ⇒

Detailed specifications: DMT6016LPS-13, DMTH4007LPS-13, DMTH6002LPS-13, DMTH6010LPSQ-13, DMTH8003SPS-13, DMTH8012LPSW-13, EMB06N03V, FDMS86380-F085, IRF530, G16P03D3, GL150N03AD, GL35N03AD3, GT080N10D5, GT110N06D5, HGQ065NE4A, HSBA3016, HSBA4115

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