GL150N03AD Specs and Replacement

Type Designator: GL150N03AD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 150 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm

Package: QFN5X6

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GL150N03AD datasheet

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GL150N03AD

R GL150N03AD GL Silicon N-Channel Power MOSFET V 30 V DSS General Description ID 150 A The GL150N03AD uses advanced trench technology P 78 W D and design to provide excellent RDS(ON) with low gate R 1.9 m DS(ON) charge. It can be used in a wide variety of applications. The QFN5 6 package form is QFN5 6, which accord... See More ⇒

Detailed specifications: DMTH6002LPS-13, DMTH6010LPSQ-13, DMTH8003SPS-13, DMTH8012LPSW-13, EMB06N03V, FDMS86380-F085, G12P03D3, G16P03D3, NCEP15T14, GL35N03AD3, GT080N10D5, GT110N06D5, HGQ065NE4A, HSBA3016, HSBA4115, HSBA4204, HSBA4909

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.