All MOSFET. GL150N03AD Datasheet

 

GL150N03AD Datasheet and Replacement


   Type Designator: GL150N03AD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: QFN5X6
 

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GL150N03AD Datasheet (PDF)

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GL150N03AD

R GL150N03AD GL Silicon N-Channel Power MOSFET V 30 V DSSGeneral Description ID 150 A The GL150N03AD uses advanced trench technology P 78 W D and design to provide excellent RDS(ON) with low gate R 1.9 m DS(ON)charge. It can be used in a wide variety of applications. The QFN56 package form is QFN56, which accord

Datasheet: DMTH6002LPS-13 , DMTH6010LPSQ-13 , DMTH8003SPS-13 , DMTH8012LPSW-13 , EMB06N03V , FDMS86380-F085 , G12P03D3 , G16P03D3 , IRFP450 , GL35N03AD3 , GT080N10D5 , GT110N06D5 , HGQ065NE4A , HSBA3016 , HSBA4115 , HSBA4204 , HSBA4909 .

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