All MOSFET. GL150N03AD Datasheet

 

GL150N03AD Datasheet and Replacement


   Type Designator: GL150N03AD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 150 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: QFN5X6
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GL150N03AD Datasheet (PDF)

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GL150N03AD

R GL150N03AD GL Silicon N-Channel Power MOSFET V 30 V DSSGeneral Description ID 150 A The GL150N03AD uses advanced trench technology P 78 W D and design to provide excellent RDS(ON) with low gate R 1.9 m DS(ON)charge. It can be used in a wide variety of applications. The QFN56 package form is QFN56, which accord

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: BF1118W | JCS8N60CB | NCE1805S | HFD8N70U | MTH13N45 | WST6225 | HYG007N03LS1C2

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