All MOSFET. GL35N03AD3 Datasheet

 

GL35N03AD3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: GL35N03AD3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 45 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: QFN3.3X3.3

 GL35N03AD3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GL35N03AD3 Datasheet (PDF)

 ..1. Size:1004K  1
 gl35n03ad3.pdf

GL35N03AD3 GL35N03AD3

R GL35N03AD3 GL Silicon N-Channel Power MOSFET General Description V 30 V DSSThe GL35N03AD3 uses advanced trench technology and I 35 A Ddesign to provide excellent RDS(ON) with low gate charge. It P 40 W DR 4.7 m can be used in a wide variety of applications. The package DS(ON)typeform is QFN 3.33.3, which accords w

 9.1. Size:727K  fairchild semi
 fgl35n120ftd.pdf

GL35N03AD3 GL35N03AD3

February 2010FGL35N120FTDtm1200V, 35A Trench IGBTFeatures General Description Field Stop Trench Technology Using advanced field stop trench technology, Fairchilds 1200Vtrench IGBTs offer superior conduction and switching perfor- High Speed Switchingmances, and easy parallel operation with exceptional avalanche Low Saturation Voltage: VCE(sat) = 1.68 V @ IC = 35Ar

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SM3317NSQG

 

 
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