All MOSFET. GL35N03AD3 Datasheet

 

GL35N03AD3 Datasheet and Replacement


   Type Designator: GL35N03AD3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: QFN3.3X3.3
 

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GL35N03AD3 Datasheet (PDF)

 ..1. Size:1004K  1
 gl35n03ad3.pdf pdf_icon

GL35N03AD3

R GL35N03AD3 GL Silicon N-Channel Power MOSFET General Description V 30 V DSSThe GL35N03AD3 uses advanced trench technology and I 35 A Ddesign to provide excellent RDS(ON) with low gate charge. It P 40 W DR 4.7 m can be used in a wide variety of applications. The package DS(ON)typeform is QFN 3.33.3, which accords w

 9.1. Size:727K  fairchild semi
 fgl35n120ftd.pdf pdf_icon

GL35N03AD3

February 2010FGL35N120FTDtm1200V, 35A Trench IGBTFeatures General Description Field Stop Trench Technology Using advanced field stop trench technology, Fairchilds 1200Vtrench IGBTs offer superior conduction and switching perfor- High Speed Switchingmances, and easy parallel operation with exceptional avalanche Low Saturation Voltage: VCE(sat) = 1.68 V @ IC = 35Ar

Datasheet: DMTH6010LPSQ-13 , DMTH8003SPS-13 , DMTH8012LPSW-13 , EMB06N03V , FDMS86380-F085 , G12P03D3 , G16P03D3 , GL150N03AD , IRFP250 , GT080N10D5 , GT110N06D5 , HGQ065NE4A , HSBA3016 , HSBA4115 , HSBA4204 , HSBA4909 , HSBA6074 .

History: ISZ019N03L5S | IRLML9303

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