GL35N03AD3 Specs and Replacement

Type Designator: GL35N03AD3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 460 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: QFN3.3X3.3

GL35N03AD3 substitution

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GL35N03AD3 datasheet

 ..1. Size:1004K  1
 gl35n03ad3.pdf pdf_icon

GL35N03AD3

R GL35N03AD3 GL Silicon N-Channel Power MOSFET General Description V 30 V DSS The GL35N03AD3 uses advanced trench technology and I 35 A D design to provide excellent RDS(ON) with low gate charge. It P 40 W D R 4.7 m can be used in a wide variety of applications. The package DS(ON)type form is QFN 3.3 3.3, which accords w... See More ⇒

 9.1. Size:727K  fairchild semi
 fgl35n120ftd.pdf pdf_icon

GL35N03AD3

February 2010 FGL35N120FTD tm 1200V, 35A Trench IGBT Features General Description Field Stop Trench Technology Using advanced field stop trench technology, Fairchild s 1200V trench IGBTs offer superior conduction and switching perfor- High Speed Switching mances, and easy parallel operation with exceptional avalanche Low Saturation Voltage VCE(sat) = 1.68 V @ IC = 35A r... See More ⇒

Detailed specifications: DMTH6010LPSQ-13, DMTH8003SPS-13, DMTH8012LPSW-13, EMB06N03V, FDMS86380-F085, G12P03D3, G16P03D3, GL150N03AD, AON7506, GT080N10D5, GT110N06D5, HGQ065NE4A, HSBA3016, HSBA4115, HSBA4204, HSBA4909, HSBA6074

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs