R GL35N03AD3 GL Silicon N-Channel Power MOSFET General Description V 30 V DSSThe GL35N03AD3 uses advanced trench technology and I 35 A Ddesign to provide excellent RDS(ON) with low gate charge. It P 40 W DR 4.7 m can be used in a wide variety of applications. The package DS(ON)typeform is QFN 3.33.3, which accords w

February 2010FGL35N120FTDtm1200V, 35A Trench IGBTFeatures General Description Field Stop Trench Technology Using advanced field stop trench technology, Fairchilds 1200Vtrench IGBTs offer superior conduction and switching perfor- High Speed Switchingmances, and easy parallel operation with exceptional avalanche Low Saturation Voltage: VCE(sat) = 1.68 V @ IC = 35Ar