GT080N10D5 Specs and Replacement

Type Designator: GT080N10D5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 315 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: DFN5X6

GT080N10D5 substitution

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GT080N10D5 datasheet

 ..1. Size:928K  1
 gt080n10d5.pdf pdf_icon

GT080N10D5

GOFORD GT080N10 N-Channel Enhancement Mode Power MOSFET Description The GT080N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features Schematic Diagram VDS 100V ID (at VGS = 10V) 75A RDS(ON) (at VGS = 10V) ... See More ⇒

 8.1. Size:759K  cn super semi
 sgt080n055.pdf pdf_icon

GT080N10D5

SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 80V Super Gate Power MOSFET SGT080N055 Rev. 1.0 Sep. 2021 www.supersemi.com.cn SGT080N055 80V N-Channel MOSFET Description Features VDS 80V The SG-MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 120A that is uniquely optimized to provide the most efficient high Typ. RD... See More ⇒

Detailed specifications: DMTH8003SPS-13, DMTH8012LPSW-13, EMB06N03V, FDMS86380-F085, G12P03D3, G16P03D3, GL150N03AD, GL35N03AD3, STP80NF70, GT110N06D5, HGQ065NE4A, HSBA3016, HSBA4115, HSBA4204, HSBA4909, HSBA6074, HSBA6115

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