All MOSFET. GT080N10D5 Datasheet

 

GT080N10D5 Datasheet and Replacement


   Type Designator: GT080N10D5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 315 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: DFN5X6
 

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GT080N10D5 Datasheet (PDF)

 ..1. Size:928K  1
 gt080n10d5.pdf pdf_icon

GT080N10D5

GOFORDGT080N10N-Channel Enhancement Mode Power MOSFETDescriptionThe GT080N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 100V ID (at VGS = 10V) 75A RDS(ON) (at VGS = 10V)

 8.1. Size:759K  cn super semi
 sgt080n055.pdf pdf_icon

GT080N10D5

SUPER-SEMISUPER-MOSFETSuper Gate Metal Oxide Semiconductor Field Effect Transistor80V Super Gate Power MOSFETSGT080N055Rev. 1.0Sep. 2021www.supersemi.com.cnSGT080N05580V N-Channel MOSFETDescription Features VDS 80VThe SG-MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 120Athat is uniquely optimized to provide the most efficient high Typ. RD

Datasheet: DMTH8003SPS-13 , DMTH8012LPSW-13 , EMB06N03V , FDMS86380-F085 , G12P03D3 , G16P03D3 , GL150N03AD , GL35N03AD3 , 20N50 , GT110N06D5 , HGQ065NE4A , HSBA3016 , HSBA4115 , HSBA4204 , HSBA4909 , HSBA6074 , HSBA6115 .

History: RSS050P03FU6TB

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