GT110N06D5 Specs and Replacement

Type Designator: GT110N06D5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 640 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: DFN5X6

GT110N06D5 substitution

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GT110N06D5 datasheet

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GT110N06D5

GOFORD GT110N06D5 N-Channel Enhancement Mode Power MOSFET Description The GT110N06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features Schematic Diagram VDS 60V ID (at VGS = 10V) 45A RDS(ON) (at VGS = 10V) ... See More ⇒

Detailed specifications: DMTH8012LPSW-13, EMB06N03V, FDMS86380-F085, G12P03D3, G16P03D3, GL150N03AD, GL35N03AD3, GT080N10D5, IRFP450, HGQ065NE4A, HSBA3016, HSBA4115, HSBA4204, HSBA4909, HSBA6074, HSBA6115, HSBA6214

Keywords - GT110N06D5 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.