All MOSFET. GT110N06D5 Datasheet

 

GT110N06D5 Datasheet and Replacement


   Type Designator: GT110N06D5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 640 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: DFN5X6
 

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GT110N06D5 Datasheet (PDF)

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GT110N06D5

GOFORD GT110N06D5N-Channel Enhancement Mode Power MOSFETDescriptionThe GT110N06D5 uses advanced trench technology toprovide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 60V ID (at VGS = 10V) 45A RDS(ON) (at VGS = 10V)

Datasheet: DMTH8012LPSW-13 , EMB06N03V , FDMS86380-F085 , G12P03D3 , G16P03D3 , GL150N03AD , GL35N03AD3 , GT080N10D5 , IRF1407 , HGQ065NE4A , HSBA3016 , HSBA4115 , HSBA4204 , HSBA4909 , HSBA6074 , HSBA6115 , HSBA6214 .

History: TPC8038-H | SWI8N80K

Keywords - GT110N06D5 MOSFET datasheet

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