GT110N06D5 Datasheet and Replacement
Type Designator: GT110N06D5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 640 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: DFN5X6
GT110N06D5 substitution
GT110N06D5 Datasheet (PDF)
gt110n06d5.pdf

GOFORD GT110N06D5N-Channel Enhancement Mode Power MOSFETDescriptionThe GT110N06D5 uses advanced trench technology toprovide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 60V ID (at VGS = 10V) 45A RDS(ON) (at VGS = 10V)
Datasheet: DMTH8012LPSW-13 , EMB06N03V , FDMS86380-F085 , G12P03D3 , G16P03D3 , GL150N03AD , GL35N03AD3 , GT080N10D5 , IRF1407 , HGQ065NE4A , HSBA3016 , HSBA4115 , HSBA4204 , HSBA4909 , HSBA6074 , HSBA6115 , HSBA6214 .
Keywords - GT110N06D5 MOSFET datasheet
GT110N06D5 cross reference
GT110N06D5 equivalent finder
GT110N06D5 lookup
GT110N06D5 substitution
GT110N06D5 replacement
History: TPC8038-H | SWI8N80K



LIST
Last Update
MOSFET: JMSL0406AKQ | JMSL0406AK | JMSL0406AGQ | JMSL0406AGDQ | JMSL0406AGD | JMSL04060GDQ | JMSL04055UQ | JMSL04055GQ | JMSL0403PU | JMSL0403PK | JMSL0403PGQ | JMSL0403PG | JMSL0403AU | JMSL0403AGQ | JMSL0403AG | JMTQ90N02A
Popular searches
2n2926 | ksa992 pinout | 2n1308 transistor | p609 | bc327-40 | tip125 | a992 transistor | 2sa913