All MOSFET. GT110N06D5 Datasheet

 

GT110N06D5 MOSFET. Datasheet pdf. Equivalent


   Type Designator: GT110N06D5
   Marking Code: GT110N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 24 nC
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 640 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: DFN5X6

 GT110N06D5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GT110N06D5 Datasheet (PDF)

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gt110n06d5.pdf

GT110N06D5
GT110N06D5

GOFORD GT110N06D5N-Channel Enhancement Mode Power MOSFETDescriptionThe GT110N06D5 uses advanced trench technology toprovide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 60V ID (at VGS = 10V) 45A RDS(ON) (at VGS = 10V)

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