GT110N06D5 Datasheet and Replacement
Type Designator: GT110N06D5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 640 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: DFN5X6
GT110N06D5 substitution
GT110N06D5 Datasheet (PDF)
gt110n06d5.pdf
GOFORD GT110N06D5N-Channel Enhancement Mode Power MOSFETDescriptionThe GT110N06D5 uses advanced trench technology toprovide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 60V ID (at VGS = 10V) 45A RDS(ON) (at VGS = 10V)
Datasheet: DMTH8012LPSW-13 , EMB06N03V , FDMS86380-F085 , G12P03D3 , G16P03D3 , GL150N03AD , GL35N03AD3 , GT080N10D5 , IRFP450 , HGQ065NE4A , HSBA3016 , HSBA4115 , HSBA4204 , HSBA4909 , HSBA6074 , HSBA6115 , HSBA6214 .
History: GL150N03AD | DMT6009LPS-13
Keywords - GT110N06D5 MOSFET datasheet
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: GL150N03AD | DMT6009LPS-13
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