All MOSFET. HGQ065NE4A Datasheet

 

HGQ065NE4A MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGQ065NE4A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 24 nC
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 493 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: PDFN5X6

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HGQ065NE4A Datasheet (PDF)

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 hgq065ne4a.pdf

HGQ065NE4A HGQ065NE4A

Silicon N-Channel Power MOSFET R HGQ065NE4A General Description VDSS 45 V HGQ065NE4A, the silicon N-channel Enhanced ID 60 A PD 39 W VDMOSFETs, is obtained by the high density Trench RDS(ON)Typ 5.2 m technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: APT6029SLL

 

 
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