All MOSFET. HGQ065NE4A Datasheet

 

HGQ065NE4A Datasheet and Replacement


   Type Designator: HGQ065NE4A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 493 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: PDFN5X6
 

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HGQ065NE4A Datasheet (PDF)

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HGQ065NE4A

Silicon N-Channel Power MOSFET R HGQ065NE4A General Description VDSS 45 V HGQ065NE4A, the silicon N-channel Enhanced ID 60 A PD 39 W VDMOSFETs, is obtained by the high density Trench RDS(ON)Typ 5.2 m technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and

Datasheet: EMB06N03V , FDMS86380-F085 , G12P03D3 , G16P03D3 , GL150N03AD , GL35N03AD3 , GT080N10D5 , GT110N06D5 , IRFZ24N , HSBA3016 , HSBA4115 , HSBA4204 , HSBA4909 , HSBA6074 , HSBA6115 , HSBA6214 , HSBB3072 .

History: APM2324A | DH019N04I

Keywords - HGQ065NE4A MOSFET datasheet

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