HGQ065NE4A Specs and Replacement

Type Designator: HGQ065NE4A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 493 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: PDFN5X6

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HGQ065NE4A datasheet

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HGQ065NE4A

Silicon N-Channel Power MOSFET R HGQ065NE4A General Description VDSS 45 V HGQ065NE4A, the silicon N-channel Enhanced ID 60 A PD 39 W VDMOSFETs, is obtained by the high density Trench RDS(ON)Typ 5.2 m technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and... See More ⇒

Detailed specifications: EMB06N03V, FDMS86380-F085, G12P03D3, G16P03D3, GL150N03AD, GL35N03AD3, GT080N10D5, GT110N06D5, TK10A60D, HSBA3016, HSBA4115, HSBA4204, HSBA4909, HSBA6074, HSBA6115, HSBA6214, HSBB3072

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