HGQ065NE4A MOSFET. Datasheet pdf. Equivalent
Type Designator: HGQ065NE4A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 39 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 24 nC
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 493 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: PDFN5X6
HGQ065NE4A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGQ065NE4A Datasheet (PDF)
..1. Size:846K 1
hgq065ne4a.pdf
hgq065ne4a.pdf
Silicon N-Channel Power MOSFET R HGQ065NE4A General Description VDSS 45 V HGQ065NE4A, the silicon N-channel Enhanced ID 60 A PD 39 W VDMOSFETs, is obtained by the high density Trench RDS(ON)Typ 5.2 m technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
