HGQ065NE4A Datasheet and Replacement
Type Designator: HGQ065NE4A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 39 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 493 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: PDFN5X6
HGQ065NE4A substitution
HGQ065NE4A Datasheet (PDF)
hgq065ne4a.pdf

Silicon N-Channel Power MOSFET R HGQ065NE4A General Description VDSS 45 V HGQ065NE4A, the silicon N-channel Enhanced ID 60 A PD 39 W VDMOSFETs, is obtained by the high density Trench RDS(ON)Typ 5.2 m technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and
Datasheet: EMB06N03V , FDMS86380-F085 , G12P03D3 , G16P03D3 , GL150N03AD , GL35N03AD3 , GT080N10D5 , GT110N06D5 , IRFZ24N , HSBA3016 , HSBA4115 , HSBA4204 , HSBA4909 , HSBA6074 , HSBA6115 , HSBA6214 , HSBB3072 .
History: CS220N04A8H | MTP3055V
Keywords - HGQ065NE4A MOSFET datasheet
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History: CS220N04A8H | MTP3055V



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