All MOSFET. HYG007N03LS1C2 Datasheet

 

HYG007N03LS1C2 Datasheet and Replacement


   Type Designator: HYG007N03LS1C2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 220 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 54 nS
   Cossⓘ - Output Capacitance: 1636 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0008 Ohm
   Package: PPAK5X6-8L
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HYG007N03LS1C2 Datasheet (PDF)

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HYG007N03LS1C2

HYG007N03LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 30V/220A D D D D D D D D RDS(ON)= 0.63m (typ.) @VGS = 10V RDS(ON)= 0.96 m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manag

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 hyg009n04ls1c2.pdf pdf_icon

HYG007N03LS1C2

HYG009N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/200A D D D D D D D D RDS(ON)= 0.75m (typ.) @VGS = 10V RDS(ON)= 1.05m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manage

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: HFD8N70U | H5N5012P | JCS8N60CB | UF830L-TM3-T | ZXMP10A13FTA | MTH13N45 | AON6586

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