All MOSFET. HYG007N03LS1C2 Datasheet

 

HYG007N03LS1C2 Datasheet and Replacement


   Type Designator: HYG007N03LS1C2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 220 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 54 nS
   Cossⓘ - Output Capacitance: 1636 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0008 Ohm
   Package: PPAK5X6-8L
 

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HYG007N03LS1C2 Datasheet (PDF)

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HYG007N03LS1C2

HYG007N03LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 30V/220A D D D D D D D D RDS(ON)= 0.63m (typ.) @VGS = 10V RDS(ON)= 0.96 m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manag

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 hyg009n04ls1c2.pdf pdf_icon

HYG007N03LS1C2

HYG009N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/200A D D D D D D D D RDS(ON)= 0.75m (typ.) @VGS = 10V RDS(ON)= 1.05m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manage

Datasheet: HSBA4909 , HSBA6074 , HSBA6115 , HSBA6214 , HSBB3072 , HSBB6113 , HSBB6254 , HY1906C2 , 75N75 , HYG009N04LS1C2 , HYG011N04LS1C2 , HYG013N03LS1C2 , HYG015N04LS1C2 , HYG017N04LS1C2 , HYG019N04NR1C2 , HYG023N03LR1C2 , HYG025N04NA1C2 .

History: FKI06108 | TPV65R100MFD | ME4470 | PP9H06BV | NCE1102N | IPI60R199CP

Keywords - HYG007N03LS1C2 MOSFET datasheet

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