HYG007N03LS1C2 Specs and Replacement

Type Designator: HYG007N03LS1C2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 220 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 54 nS

Cossⓘ - Output Capacitance: 1636 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0008 Ohm

Package: PPAK5X6-8L

HYG007N03LS1C2 substitution

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HYG007N03LS1C2 datasheet

 ..1. Size:709K  1
 hyg007n03ls1c2.pdf pdf_icon

HYG007N03LS1C2

HYG007N03LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 30V/220A D D D D D D D D RDS(ON)= 0.63m (typ.) @VGS = 10V RDS(ON)= 0.96 m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manag... See More ⇒

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 hyg009n04ls1c2.pdf pdf_icon

HYG007N03LS1C2

HYG009N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/200A D D D D D D D D RDS(ON)= 0.75m (typ.) @VGS = 10V RDS(ON)= 1.05m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manage... See More ⇒

Detailed specifications: HSBA4909, HSBA6074, HSBA6115, HSBA6214, HSBB3072, HSBB6113, HSBB6254, HY1906C2, 18N50, HYG009N04LS1C2, HYG011N04LS1C2, HYG013N03LS1C2, HYG015N04LS1C2, HYG017N04LS1C2, HYG019N04NR1C2, HYG023N03LR1C2, HYG025N04NA1C2

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