All MOSFET. HYG007N03LS1C2 Datasheet

 

HYG007N03LS1C2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HYG007N03LS1C2
   Marking Code: G007N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 220 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 104 nC
   trⓘ - Rise Time: 54 nS
   Cossⓘ - Output Capacitance: 1636 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0008 Ohm
   Package: PPAK5X6-8L

 HYG007N03LS1C2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HYG007N03LS1C2 Datasheet (PDF)

 ..1. Size:709K  1
 hyg007n03ls1c2.pdf

HYG007N03LS1C2 HYG007N03LS1C2

HYG007N03LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 30V/220A D D D D D D D D RDS(ON)= 0.63m (typ.) @VGS = 10V RDS(ON)= 0.96 m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manag

 9.1. Size:769K  1
 hyg009n04ls1c2.pdf

HYG007N03LS1C2 HYG007N03LS1C2

HYG009N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/200A D D D D D D D D RDS(ON)= 0.75m (typ.) @VGS = 10V RDS(ON)= 1.05m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manage

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IRFPE50

 

 
Back to Top