All MOSFET. HYG045N03LA1C1 Datasheet

 

HYG045N03LA1C1 Datasheet and Replacement


   Type Designator: HYG045N03LA1C1
   Marking Code: G045N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 46.2 nC
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 273 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
   Package: DFN3X3-8L
 

 HYG045N03LA1C1 substitution

   - MOSFET ⓘ Cross-Reference Search

 

HYG045N03LA1C1 Datasheet (PDF)

 ..1. Size:1340K  1
hyg045n03la1c1.pdf pdf_icon

HYG045N03LA1C1

HYG045N03LA1C1N-Channel Enhancement Mode MOSFETFeature Pin Description 30V/50ARDS(ON)=3.9 m (typ.) @VGS = 10VRDS(ON)=5.2 m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices AvailablePin1(RoHS Compliant)Applications Switching Application Battery ProtectionSingle N-Channel MOSFETOrdering and Marking Info

 1.1. Size:1346K  1
hyg045n03la1c2.pdf pdf_icon

HYG045N03LA1C1

HYG045N03LA1C2Single N-Channel Enhancement Mode MOSFETFeature Pin Description 30V/78AD D D DD D D DRDS(ON)= 3.6 m(typ.) @VGS = 10VRDS(ON)= 4.8 m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S SS S S GPDFN8L(5x6)Applications Load Switch Lithium battery protect boardSingle N-Channel MOSFETO

 1.2. Size:1346K  hymexa
hyg045n03la1c2.pdf pdf_icon

HYG045N03LA1C1

HYG045N03LA1C2Single N-Channel Enhancement Mode MOSFETFeature Pin Description 30V/78AD D D DD D D DRDS(ON)= 3.6 m(typ.) @VGS = 10VRDS(ON)= 4.8 m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S SS S S GPDFN8L(5x6)Applications Load Switch Lithium battery protect boardSingle N-Channel MOSFETO

 9.1. Size:863K  1
hyg042n10ns1p hyg042n10ns1b.pdf pdf_icon

HYG045N03LA1C1

HYG042N10NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 100V/160A RDS(ON)=3.5m(typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Power Switching application DC-DC Converters N-Channel MOSFET Ordering and Marking Information

Datasheet: HYG009N04LS1C2 , HYG011N04LS1C2 , HYG013N03LS1C2 , HYG015N04LS1C2 , HYG017N04LS1C2 , HYG019N04NR1C2 , HYG023N03LR1C2 , HYG025N04NA1C2 , IRF520 , HYG055N08NS1C2 , HYG072N10LS1C2 , HYG110P04LQ2C2 , IPLK60R1K0PFD7 , IPLK60R1K5PFD7 , IPLK60R360PFD7 , IPLK60R600PFD7 , IRFH3707TRPBF .

Keywords - HYG045N03LA1C1 MOSFET datasheet

 HYG045N03LA1C1 cross reference
 HYG045N03LA1C1 equivalent finder
 HYG045N03LA1C1 lookup
 HYG045N03LA1C1 substitution
 HYG045N03LA1C1 replacement

 

 
Back to Top

 


 
.