All MOSFET. HYG045N03LA1C1 Datasheet

 

HYG045N03LA1C1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HYG045N03LA1C1
   Marking Code: G045N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 46.2 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 273 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
   Package: DFN3X3-8L

 HYG045N03LA1C1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HYG045N03LA1C1 Datasheet (PDF)

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 hyg045n03la1c1.pdf

HYG045N03LA1C1 HYG045N03LA1C1

HYG045N03LA1C1N-Channel Enhancement Mode MOSFETFeature Pin Description 30V/50ARDS(ON)=3.9 m (typ.) @VGS = 10VRDS(ON)=5.2 m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices AvailablePin1(RoHS Compliant)Applications Switching Application Battery ProtectionSingle N-Channel MOSFETOrdering and Marking Info

 1.1. Size:1346K  1
 hyg045n03la1c2.pdf

HYG045N03LA1C1 HYG045N03LA1C1

HYG045N03LA1C2Single N-Channel Enhancement Mode MOSFETFeature Pin Description 30V/78AD D D DD D D DRDS(ON)= 3.6 m(typ.) @VGS = 10VRDS(ON)= 4.8 m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S SS S S GPDFN8L(5x6)Applications Load Switch Lithium battery protect boardSingle N-Channel MOSFETO

 1.2. Size:1346K  hymexa
 hyg045n03la1c2.pdf

HYG045N03LA1C1 HYG045N03LA1C1

HYG045N03LA1C2Single N-Channel Enhancement Mode MOSFETFeature Pin Description 30V/78AD D D DD D D DRDS(ON)= 3.6 m(typ.) @VGS = 10VRDS(ON)= 4.8 m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S SS S S GPDFN8L(5x6)Applications Load Switch Lithium battery protect boardSingle N-Channel MOSFETO

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 hyg042n10ns1p hyg042n10ns1b.pdf

HYG045N03LA1C1 HYG045N03LA1C1

HYG042N10NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 100V/160A RDS(ON)=3.5m(typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Power Switching application DC-DC Converters N-Channel MOSFET Ordering and Marking Information

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: MCT04N10 | WMB080N03LG2 | 2N6764 | SDF9N100GAF-S | SRC60R090B

 

 
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