HYG110P04LQ2C2 Specs and Replacement

Type Designator: HYG110P04LQ2C2

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 48 nS

Cossⓘ - Output Capacitance: 253 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm

Package: PDFN5X6-8L

HYG110P04LQ2C2 substitution

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HYG110P04LQ2C2 datasheet

 ..1. Size:739K  1
 hyg110p04lq2c2.pdf pdf_icon

HYG110P04LQ2C2

HYG110P04LQ2C2 Single P-Channel Enhancement Mode MOSFET Feature Description Pin Description -40V/-55A D D D D D D D D RDS(ON)= 9.0 m (typ.) @VGS = - 10V RDS(ON)= 13.0 m (typ.) @VGS = - 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Powe... See More ⇒

 2.1. Size:655K  hymexa
 hyg110p04lq2d hyg110p04lq2u hyg110p04lq2v.pdf pdf_icon

HYG110P04LQ2C2

HYG110P04LQ2 D/U/V P-Channel Enhancement Mode MOSFET Feature Pin Description -40V/-50A RDS(ON)= 9.4m (typ.) @VGS = -10V RDS(ON)= 13 m (typ.) @VGS = -4.5V S D S G D 100% avalanche tested G S Reliable and Rugged D G Halogen Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Switching application Power Management in ... See More ⇒

Detailed specifications: HYG015N04LS1C2, HYG017N04LS1C2, HYG019N04NR1C2, HYG023N03LR1C2, HYG025N04NA1C2, HYG045N03LA1C1, HYG055N08NS1C2, HYG072N10LS1C2, STP65NF06, IPLK60R1K0PFD7, IPLK60R1K5PFD7, IPLK60R360PFD7, IPLK60R600PFD7, IRFH3707TRPBF, IRFH5006TRPBF, IRFH5010TRPBF, IRFH5020TRPBF

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.