All MOSFET. HYG110P04LQ2C2 Datasheet

 

HYG110P04LQ2C2 Datasheet and Replacement


   Type Designator: HYG110P04LQ2C2
   Marking Code: G110P04
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 76 nC
   tr ⓘ - Rise Time: 48 nS
   Cossⓘ - Output Capacitance: 253 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
   Package: PDFN5X6-8L
 

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HYG110P04LQ2C2 Datasheet (PDF)

 ..1. Size:739K  1
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HYG110P04LQ2C2

HYG110P04LQ2C2 Single P-Channel Enhancement Mode MOSFET Feature Description Pin Description -40V/-55A D D D D D D D D RDS(ON)= 9.0 m (typ.) @VGS = - 10V RDS(ON)= 13.0 m (typ.) @VGS = - 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Powe

 2.1. Size:655K  hymexa
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HYG110P04LQ2C2

HYG110P04LQ2 D/U/V P-Channel Enhancement Mode MOSFET Feature Pin Description -40V/-50ARDS(ON)= 9.4m(typ.) @VGS = -10V RDS(ON)= 13 m(typ.) @VGS = -4.5V SDSGD 100% avalanche testedGS Reliable and Rugged DG Halogen Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Switching application Power Management in

Datasheet: HYG015N04LS1C2 , HYG017N04LS1C2 , HYG019N04NR1C2 , HYG023N03LR1C2 , HYG025N04NA1C2 , HYG045N03LA1C1 , HYG055N08NS1C2 , HYG072N10LS1C2 , IRFZ48N , IPLK60R1K0PFD7 , IPLK60R1K5PFD7 , IPLK60R360PFD7 , IPLK60R600PFD7 , IRFH3707TRPBF , IRFH5006TRPBF , IRFH5010TRPBF , IRFH5020TRPBF .

History: TK80F08K3 | HP8KA1

Keywords - HYG110P04LQ2C2 MOSFET datasheet

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