IRFHM830TRPBF MOSFET Datasheet: N-Ch, 30V, 40A. Full specification with pinout and replacement list

IRFHM830TRPBF Specs and Replacement

   Type Designator: IRFHM830TRPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: PQFN3.3X3.3

IRFHM830TRPBF substitution

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IRFHM830TRPBF datasheet

..1. Size:532K 1
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IRFHM830PbF HEXFET Power MOSFET VDSS 30 V RDS(on) max 3.8 m (@ VGS = 10V) Qg (typical) 15 nC Rg (typical) 2.5 ID 40 A (@TC (Bottom) = 25 C) PQFN 3.3 x 3.3 mm Applications Battery Operated DC Motor Inverter MOSFET Features Benefits Low RDSon (... See More ⇒

6.1. Size:243K international rectifier
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PD -96327A IRFHM830DPbF HEXFET Power MOSFET VDS 30 V RDS(on) max D 5 4 G 4.3 m (@VGS = 10V) D 6 3 S Qg (typical) 13 nC D 7 2 S RG (typical) 1.1 D 8 1 S ID 40 A 3.3mm x 3.3mm PQFN (@Tc(Bottom) = 25 C) Applications Synchronous MOSFET for Buck Converters Features and Benefits Features Benefits Low RDSon ( 4.3m ) Lower Conduction Losses Schottky intrin... See More ⇒

6.2. Size:532K international rectifier
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