JMTQ55P02A Specs and Replacement
Type Designator: JMTQ55P02A
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 55 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 59 nS
Cossⓘ - Output Capacitance: 460 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: PDFN3.3X3.3-8L
JMTQ55P02A substitution
- MOSFET ⓘ Cross-Reference Search
JMTQ55P02A datasheet
jmtq55p02a.pdf
JMTQ55P02A Description JMT P-channel MOSFET Features Application V =-20V, I =-55A PWM Applications DS D R ... See More ⇒
jmtq55p02a.pdf
JMTQ55P02A Description JMT P-channel Enhancement Mode Power MOSFET Features Application V =-20V, I =-55A PWM Applications DS D R ... See More ⇒
Detailed specifications: IRLHM630TRPBF, JMSL0302AG, JMSL0302AU, JMSL0406AG, JMSL0606AG, JMTG040N03A, JMTG3002B, JMTQ35N06A, IRFB4110, JSM2050, JSM2622, JSM3622, JSM36326, JSM6435, JSM6764, JSM7240, JSM7409
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