JSM2050 Specs and Replacement
Type Designator: JSM2050
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 51 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17.2 nS
Cossⓘ - Output Capacitance: 500 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: PDFN3333-8
JSM2050 substitution
- MOSFET ⓘ Cross-Reference Search
JSM2050 datasheet
jsm2050.pdf
N-Channel Enhancement Mode Power MOSFET D Description The JSM2050 uses advanced trench technology to G provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. S General Features Schematic diagram VDS = 20V,ID = 50A RDS(ON) ... See More ⇒
Detailed specifications: JMSL0302AG, JMSL0302AU, JMSL0406AG, JMSL0606AG, JMTG040N03A, JMTG3002B, JMTQ35N06A, JMTQ55P02A, IRF640N, JSM2622, JSM3622, JSM36326, JSM6435, JSM6764, JSM7240, JSM7409, JSM7409B
Keywords - JSM2050 MOSFET specs
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