JSM36326 Datasheet and Replacement
Type Designator: JSM36326
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 19 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 28 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 305 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0099 Ohm
Package: DFN3X3EP
- MOSFET Cross-Reference Search
JSM36326 Datasheet (PDF)
jsm36326.pdf

JSM36326N-Channel Enhancement Mode Power MOSFETN-Channel Enhancement Mode Power MOSFET 28V N-Channel MOSFETDFN 3x3_EPPRODUCT SUMMARYTop View Bottom ViewVDS (V) = 28VID = 12A (VGS = 10V)RDS(ON)
jsm3622.pdf

JSM3622N -CHANNEL ENHANCEMENT MODE POWER MOSFETDescription D1 D2The JSM3622 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. S1 S2Schematic diagram General Feature VDS =30V,ID =25A RDS(ON) Typ
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: 2SK3471 | HX70N6 | FRS440R | FQD10N20C | 10N80 | HMS170N03D | 2SJ605
Keywords - JSM36326 MOSFET datasheet
JSM36326 cross reference
JSM36326 equivalent finder
JSM36326 lookup
JSM36326 substitution
JSM36326 replacement
History: 2SK3471 | HX70N6 | FRS440R | FQD10N20C | 10N80 | HMS170N03D | 2SJ605



LIST
Last Update
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
Popular searches
irf540z | ss8550 transistor | irfp240 mosfet | tip141 | 2n404 | 2n4250 | d882 transistor equivalent | 17n80c3