JSM36326 MOSFET Datasheet: N-Ch, 28V, 12A. Full specification with pinout and replacement list

JSM36326 Specs and Replacement

Type Designator: JSM36326

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 19 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 28 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 305 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0099 Ohm

Package: DFN3X3EP

JSM36326 substitution

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JSM36326 datasheet

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JSM36326 N-Channel Enhancement Mode Power MOSFET N-Channel Enhancement Mode Power MOSFET 28V N-Channel MOSFET DFN 3x3_EP PRODUCT SUMMARY Top View Bottom View VDS (V) = 28V ID = 12A (VGS = 10V) RDS(ON) ... See More ⇒

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JSM3622 N -CHANNEL ENHANCEMENT MODE POWER MOSFET Description D1 D2 The JSM3622 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2 voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. S1 S2 Schematic diagram General Feature VDS =30V,ID =25A RDS(ON) Typ... See More ⇒

Detailed specifications: JMSL0606AG, JMTG040N03A, JMTG3002B, JMTQ35N06A, JMTQ55P02A, JSM2050, JSM2622, JSM3622, IRFB4227, JSM6435, JSM6764, JSM7240, JSM7409, JSM7409B, JSM7410, JSM7788, KCY3008A