All MOSFET. JSM36326 Datasheet

 

JSM36326 Datasheet and Replacement


   Type Designator: JSM36326
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 19 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 28 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 305 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0099 Ohm
   Package: DFN3X3EP
 

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JSM36326 Datasheet (PDF)

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JSM36326

JSM36326N-Channel Enhancement Mode Power MOSFETN-Channel Enhancement Mode Power MOSFET 28V N-Channel MOSFETDFN 3x3_EPPRODUCT SUMMARYTop View Bottom ViewVDS (V) = 28VID = 12A (VGS = 10V)RDS(ON)

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JSM36326

JSM3622N -CHANNEL ENHANCEMENT MODE POWER MOSFETDescription D1 D2The JSM3622 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. S1 S2Schematic diagram General Feature VDS =30V,ID =25A RDS(ON) Typ

Datasheet: JMSL0606AG , JMTG040N03A , JMTG3002B , JMTQ35N06A , JMTQ55P02A , JSM2050 , JSM2622 , JSM3622 , IRFB4227 , JSM6435 , JSM6764 , JSM7240 , JSM7409 , JSM7409B , JSM7410 , JSM7788 , KCY3008A .

History: JSM7240 | SPB65R180G | VS6640AC | 2SK3320 | SML5022BN | NTMFD6H846NLT1G | KCY3303S

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