LSGNE03R098WB Specs and Replacement
Type Designator: LSGNE03R098WB
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 18 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.8 nS
Cossⓘ - Output Capacitance: 270 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0098 Ohm
Package: PRPAK3X3
LSGNE03R098WB substitution
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LSGNE03R098WB datasheet
Detailed specifications: JSM7240, JSM7409, JSM7409B, JSM7410, JSM7788, KCY3008A, KCY3310A, KNY3403B, IRF9540, MCAC10H03-TP, MCAC16N03-TP, MCAC30N06Y-TP, MCAC40N10YA-TP, MCAC50N06Y-TP, MCAC50N10Y-TP, MCAC60N08Y-TP, MCAC75N02-TP
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: LNH5N65B
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