All MOSFET. MCAC40N10YA-TP Datasheet

 

MCAC40N10YA-TP MOSFET. Datasheet pdf. Equivalent


   Type Designator: MCAC40N10YA-TP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30.6 nC
   trⓘ - Rise Time: 21.4 nS
   Cossⓘ - Output Capacitance: 259 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: DFN5060

 MCAC40N10YA-TP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MCAC40N10YA-TP Datasheet (PDF)

 ..1. Size:1668K  1
 mcac40n10ya-tp.pdf

MCAC40N10YA-TP MCAC40N10YA-TP

MCAC40N10YAElectrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 100 VIGSS VDS=0V, VGS =20VGate-Source Leakage Current 100 nAIDSS VDS=80V, VGS=0VZero Gate Voltage Drain Current 1 A2 4 VGate-Threshold Voltage(Note 2 VGS(th) VDS

 3.1. Size:1668K  mcc
 mcac40n10ya.pdf

MCAC40N10YA-TP MCAC40N10YA-TP

MCAC40N10YAElectrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 100 VIGSS VDS=0V, VGS =20VGate-Source Leakage Current 100 nAIDSS VDS=80V, VGS=0VZero Gate Voltage Drain Current 1 A2 4 VGate-Threshold Voltage(Note 2 VGS(th) VDS

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IXFX13N100

 

 
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