MCAC40N10YA-TP Datasheet and Replacement
Type Designator: MCAC40N10YA-TP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 21.4 nS
Cossⓘ - Output Capacitance: 259 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: DFN5060
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MCAC40N10YA-TP Datasheet (PDF)
mcac40n10ya-tp.pdf
MCAC40N10YAElectrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 100 VIGSS VDS=0V, VGS =20VGate-Source Leakage Current 100 nAIDSS VDS=80V, VGS=0VZero Gate Voltage Drain Current 1 A2 4 VGate-Threshold Voltage(Note 2 VGS(th) VDS
mcac40n10ya.pdf
MCAC40N10YAElectrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 100 VIGSS VDS=0V, VGS =20VGate-Source Leakage Current 100 nAIDSS VDS=80V, VGS=0VZero Gate Voltage Drain Current 1 A2 4 VGate-Threshold Voltage(Note 2 VGS(th) VDS
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: UT65N03 | TSM4424CS | LKK47-06C5 | IPAN60R360P7S | SFB063N80C3 | SLF13N50A | BRCS200P03DP
Keywords - MCAC40N10YA-TP MOSFET datasheet
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History: UT65N03 | TSM4424CS | LKK47-06C5 | IPAN60R360P7S | SFB063N80C3 | SLF13N50A | BRCS200P03DP
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