MCAC60N08Y-TP Datasheet and Replacement
Type Designator: MCAC60N08Y-TP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 337 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
Package: DFN5060
MCAC60N08Y-TP substitution
MCAC60N08Y-TP Datasheet (PDF)
mcac60n08y-tp.pdf
MCAC60N08YElectrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 80 VIGSS VDS=0V, VGS =20VGate-Source Leakage Current 100 nAIDSS VDS=64V, VGS=0VZero Gate Voltage Drain Current 1 AVGS(th) VDS=VGS, ID=250AGate-Threshold Voltage 2
mcac60n08y.pdf
MCAC60N08YElectrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 80 VIGSS VDS=0V, VGS =20VGate-Source Leakage Current 100 nAIDSS VDS=64V, VGS=0VZero Gate Voltage Drain Current 1 AVGS(th) VDS=VGS, ID=250AGate-Threshold Voltage 2
Datasheet: KNY3403B , LSGNE03R098WB , MCAC10H03-TP , MCAC16N03-TP , MCAC30N06Y-TP , MCAC40N10YA-TP , MCAC50N06Y-TP , MCAC50N10Y-TP , 5N60 , MCAC75N02-TP , MCAC80N045Y-TP , MCG10P03-TP , MCG30N03-TP , ME7114S , ME7170 , MEE7816S , MSJAC11N65Y-TP .
History: DMG8822UTS | AP10TN135M | FDMC86320 | LNG045R090 | SKST065N08N | RJK0215DPA | AP10TN030M
Keywords - MCAC60N08Y-TP MOSFET datasheet
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History: DMG8822UTS | AP10TN135M | FDMC86320 | LNG045R090 | SKST065N08N | RJK0215DPA | AP10TN030M
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