MCAC75N02-TP PDF and Equivalents Search

 

MCAC75N02-TP Specs and Replacement

Type Designator: MCAC75N02-TP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 87 nS

Cossⓘ - Output Capacitance: 372 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm

Package: DFN5060

MCAC75N02-TP substitution

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MCAC75N02-TP datasheet

 ..1. Size:1537K  1
 mcac75n02-tp.pdf pdf_icon

MCAC75N02-TP

MCAC75N02 Electrical Characteristics @ 25 C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250 A Drain-Source Breakdown Voltage 20 V IGSS VDS=0V, VGS = 10V Gate-Source Leakage Current 100 nA IDSS VDS=16V, VGS=0V Zero Gate Voltage Drain Current 1 A VGS(th) VDS=VGS, ID=250 A Gate-Threshold Voltage 0.3... See More ⇒

 5.1. Size:1537K  mcc
 mcac75n02.pdf pdf_icon

MCAC75N02-TP

MCAC75N02 Electrical Characteristics @ 25 C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250 A Drain-Source Breakdown Voltage 20 V IGSS VDS=0V, VGS = 10V Gate-Source Leakage Current 100 nA IDSS VDS=16V, VGS=0V Zero Gate Voltage Drain Current 1 A VGS(th) VDS=VGS, ID=250 A Gate-Threshold Voltage 0.3... See More ⇒

Detailed specifications: LSGNE03R098WB, MCAC10H03-TP, MCAC16N03-TP, MCAC30N06Y-TP, MCAC40N10YA-TP, MCAC50N06Y-TP, MCAC50N10Y-TP, MCAC60N08Y-TP, AO3401, MCAC80N045Y-TP, MCG10P03-TP, MCG30N03-TP, ME7114S, ME7170, MEE7816S, MSJAC11N65Y-TP, MSK100N03DF

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