All MOSFET. MCG10P03-TP Datasheet

 

MCG10P03-TP Datasheet and Replacement


   Type Designator: MCG10P03-TP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: DFN3030
 

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MCG10P03-TP Datasheet (PDF)

 ..1. Size:946K  1
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MCG10P03-TP

MCG10P03Features High Density Cell Desihn for Ultra Low RDS(on) Fully Characterized Avalanche Voltage and Current Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 P-CHANNEL Halogen Free. Green Device (Note 1)MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum Ratings

 6.1. Size:946K  mcc
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MCG10P03-TP

MCG10P03Features High Density Cell Desihn for Ultra Low RDS(on) Fully Characterized Avalanche Voltage and Current Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 P-CHANNEL Halogen Free. Green Device (Note 1)MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum Ratings

Datasheet: MCAC16N03-TP , MCAC30N06Y-TP , MCAC40N10YA-TP , MCAC50N06Y-TP , MCAC50N10Y-TP , MCAC60N08Y-TP , MCAC75N02-TP , MCAC80N045Y-TP , 8205A , MCG30N03-TP , ME7114S , ME7170 , MEE7816S , MSJAC11N65Y-TP , MSK100N03DF , MSK20P80GNF , MSK30N03DF .

History: EMB22A04G | EMF50N03JS | 4N90L-TF3T-T | R6020ENX | HUF75639S3ST | STG8820 | SFS06R03FF

Keywords - MCG10P03-TP MOSFET datasheet

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