MCG10P03-TP Specs and Replacement
Type Designator: MCG10P03-TP
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 260 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
Package: DFN3030
MCG10P03-TP substitution
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MCG10P03-TP datasheet
mcg10p03-tp.pdf
MCG10P03 Features High Density Cell Desihn for Ultra Low RDS(on) Fully Characterized Avalanche Voltage and Current Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 P-CHANNEL Halogen Free. Green Device (Note 1) MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings ... See More ⇒
mcg10p03.pdf
MCG10P03 Features High Density Cell Desihn for Ultra Low RDS(on) Fully Characterized Avalanche Voltage and Current Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 P-CHANNEL Halogen Free. Green Device (Note 1) MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings ... See More ⇒
Detailed specifications: MCAC16N03-TP, MCAC30N06Y-TP, MCAC40N10YA-TP, MCAC50N06Y-TP, MCAC50N10Y-TP, MCAC60N08Y-TP, MCAC75N02-TP, MCAC80N045Y-TP, IRFP260, MCG30N03-TP, ME7114S, ME7170, MEE7816S, MSJAC11N65Y-TP, MSK100N03DF, MSK20P80GNF, MSK30N03DF
Keywords - MCG10P03-TP MOSFET specs
MCG10P03-TP cross reference
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MCG10P03-TP replacement
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