MSJAC11N65Y-TP PDF and Equivalents Search

 

MSJAC11N65Y-TP Specs and Replacement

Type Designator: MSJAC11N65Y-TP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: DFN5060

MSJAC11N65Y-TP substitution

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MSJAC11N65Y-TP datasheet

 ..1. Size:908K  1
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MSJAC11N65Y-TP

MSJAC11N65Y Electrical Characteristics @ 25 C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250 A Drain-Source Breakdown Voltage 650 V IGSS VDS=0V, VGS = 30V Gate-Source Leakage Current 100 nA VDS=650V, VGS=0V 1 IDSS Zero Gate Voltage Drain Current A VDS=650V, VGS=0V, TJ=150 C 100 VGS(th) VDS=... See More ⇒

 3.1. Size:908K  mcc
 msjac11n65y.pdf pdf_icon

MSJAC11N65Y-TP

MSJAC11N65Y Electrical Characteristics @ 25 C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250 A Drain-Source Breakdown Voltage 650 V IGSS VDS=0V, VGS = 30V Gate-Source Leakage Current 100 nA VDS=650V, VGS=0V 1 IDSS Zero Gate Voltage Drain Current A VDS=650V, VGS=0V, TJ=150 C 100 VGS(th) VDS=... See More ⇒

Detailed specifications: MCAC60N08Y-TP, MCAC75N02-TP, MCAC80N045Y-TP, MCG10P03-TP, MCG30N03-TP, ME7114S, ME7170, MEE7816S, 13N50, MSK100N03DF, MSK20P80GNF, MSK30N03DF, MSK30P02DF, MSK3419DF, MSK50N03DF, MSK50P03NF, MSK60N03DF

Keywords - MSJAC11N65Y-TP MOSFET specs

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