MSK20P80GNF Specs and Replacement
Type Designator: MSK20P80GNF
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 41.67 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 18 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20.6 nS
Cossⓘ - Output Capacitance: 1670 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: DFN5X6-8L
MSK20P80GNF substitution
MSK20P80GNF datasheet
msk20p80gnf.pdf
www.msksemi.com MSK20P80GNF Semiconductor Compiance General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are ... See More ⇒
Detailed specifications: MCAC80N045Y-TP , MCG10P03-TP , MCG30N03-TP , ME7114S , ME7170 , MEE7816S , MSJAC11N65Y-TP , MSK100N03DF , 12N60 , MSK30N03DF , MSK30P02DF , MSK3419DF , MSK50N03DF , MSK50P03NF , MSK60N03DF , MSK7804 , MSK80N03NF .
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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