All MOSFET. MSK20P80GNF Datasheet

 

MSK20P80GNF Datasheet and Replacement


   Type Designator: MSK20P80GNF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 41.67 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 18 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20.6 nS
   Cossⓘ - Output Capacitance: 1670 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: DFN5X6-8L
 

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MSK20P80GNF Datasheet (PDF)

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MSK20P80GNF

www.msksemi.comMSK20P80GNFSemiconductorCompianceGeneral DescriptionThese P-Channel enhancement mode power field effecttransistors are using trench DMOS technology. Thisadvanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are

Datasheet: MCAC80N045Y-TP , MCG10P03-TP , MCG30N03-TP , ME7114S , ME7170 , MEE7816S , MSJAC11N65Y-TP , MSK100N03DF , 4N60 , MSK30N03DF , MSK30P02DF , MSK3419DF , MSK50N03DF , MSK50P03NF , MSK60N03DF , MSK7804 , MSK80N03NF .

History: IRFL9014TRPBF | MSK30N03DF | FQU9N25TU | BLS60R380F-D | 2SK3983-01SJ | LNG2N60 | FDD3682-F085

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