All MOSFET. MSK30P02DF Datasheet

 

MSK30P02DF Datasheet and Replacement


   Type Designator: MSK30P02DF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 18 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 35 nC
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 690 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: DFN3X3-8L
 

 MSK30P02DF substitution

   - MOSFET ⓘ Cross-Reference Search

 

MSK30P02DF Datasheet (PDF)

 ..1. Size:487K  1
 msk30p02df.pdf pdf_icon

MSK30P02DF

www.msksemi.comMSK30P02DFSemiconductorCompianceDescriptionThe MSK30P02DF is the high cell density trenchedD D D DP-ch MOSFETs, which provide excellentRDSON and gate charge for most of thesynchronous buck converter applications.The MSK30P02DF meet the RoHS and GreenS S S GProduct requirement with full function reliabilityapproved.DFN3X3-8LProduct SummaryBVDSS RDS

 9.1. Size:5063K  1
 msk30n03df.pdf pdf_icon

MSK30P02DF

www.msksemi.comMSK30N03DFSemiconductorCompianceDescription The MSK30N03DF uses advanced trench technology D D D D to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a S S S G Battery protection or in other Switching application. DFN3X3-8LGeneral Features V = 30V I =30 A DS DR

Datasheet: MCG30N03-TP , ME7114S , ME7170 , MEE7816S , MSJAC11N65Y-TP , MSK100N03DF , MSK20P80GNF , MSK30N03DF , IRF530 , MSK3419DF , MSK50N03DF , MSK50P03NF , MSK60N03DF , MSK7804 , MSK80N03NF , NTMFD5875NLT1G , NTMFD5C466NLT1G .

Keywords - MSK30P02DF MOSFET datasheet

 MSK30P02DF cross reference
 MSK30P02DF equivalent finder
 MSK30P02DF lookup
 MSK30P02DF substitution
 MSK30P02DF replacement

 

 
Back to Top

 


 
.