All MOSFET. MSK30P02DF Datasheet

 

MSK30P02DF Datasheet and Replacement


   Type Designator: MSK30P02DF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 18 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 690 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: DFN3X3-8L
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MSK30P02DF Datasheet (PDF)

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MSK30P02DF

www.msksemi.comMSK30P02DFSemiconductorCompianceDescriptionThe MSK30P02DF is the high cell density trenchedD D D DP-ch MOSFETs, which provide excellentRDSON and gate charge for most of thesynchronous buck converter applications.The MSK30P02DF meet the RoHS and GreenS S S GProduct requirement with full function reliabilityapproved.DFN3X3-8LProduct SummaryBVDSS RDS

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MSK30P02DF

www.msksemi.comMSK30N03DFSemiconductorCompianceDescription The MSK30N03DF uses advanced trench technology D D D D to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a S S S G Battery protection or in other Switching application. DFN3X3-8LGeneral Features V = 30V I =30 A DS DR

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: ZVN0124ASTOA | FCPF7N60YDTU | SPD04N60S5 | H7N1002LM | DM12N65C | AP6679GI-HF

Keywords - MSK30P02DF MOSFET datasheet

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