All MOSFET. MSK3419DF Datasheet

 

MSK3419DF Datasheet and Replacement


   Type Designator: MSK3419DF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.57 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11.2 nS
   Cossⓘ - Output Capacitance: 194 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: DFN3X3-8L
 

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MSK3419DF Datasheet (PDF)

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MSK3419DF

www.msksemi.comMSK3419DFSemiconductorCompianceDescriptionThe MSK3419DF uses advanced trench technologyD D D Dand design to provide excellent with lowRDS(ON)gate charge .Thisdevice is well suitedfor high current load applications.General FeaturesS S S GV =-30V,I =-30ADS DRDS(ON)

Datasheet: ME7114S , ME7170 , MEE7816S , MSJAC11N65Y-TP , MSK100N03DF , MSK20P80GNF , MSK30N03DF , MSK30P02DF , AON7506 , MSK50N03DF , MSK50P03NF , MSK60N03DF , MSK7804 , MSK80N03NF , NTMFD5875NLT1G , NTMFD5C466NLT1G , NTMFD5C466NT1G .

History: LNH05R100 | HSCB1216

Keywords - MSK3419DF MOSFET datasheet

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