MSK3419DF PDF and Equivalents Search

 

MSK3419DF Specs and Replacement

Type Designator: MSK3419DF

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.57 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.2 nS

Cossⓘ - Output Capacitance: 194 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: DFN3X3-8L

MSK3419DF substitution

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MSK3419DF datasheet

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MSK3419DF

www.msksemi.com MSK3419DF Semiconductor Compiance Description The MSK3419DF uses advanced trench technology D D D D and design to provide excellent with low RDS(ON) gate charge .Thisdevice is well suited for high current load applications. General Features S S S G V =-30V,I =-30A DS D RDS(ON) ... See More ⇒

Detailed specifications: ME7114S, ME7170, MEE7816S, MSJAC11N65Y-TP, MSK100N03DF, MSK20P80GNF, MSK30N03DF, MSK30P02DF, IRFB3607, MSK50N03DF, MSK50P03NF, MSK60N03DF, MSK7804, MSK80N03NF, NTMFD5875NLT1G, NTMFD5C466NLT1G, NTMFD5C466NT1G

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