All MOSFET. MSK50N03DF Datasheet

 

MSK50N03DF MOSFET. Datasheet pdf. Equivalent


   Type Designator: MSK50N03DF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 46 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.8 nC
   trⓘ - Rise Time: 10.8 nS
   Cossⓘ - Output Capacitance: 163 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: DFN3X3-8L

 MSK50N03DF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MSK50N03DF Datasheet (PDF)

 ..1. Size:548K  1
 msk50n03df.pdf

MSK50N03DF MSK50N03DF

www.msksemi.comMSK50N03DFSemiconductorCompianceDescriptionD D D DThe MSK50N03DF is the high cell densitytrenched N-ch MOSFETs, which provideexcellent RDSON and gate charge for most ofthe synchronous buck converter applications.S S S GThe MSK50N03DF meet the RoHS and GreenDFN3X3-8LProduct SummaryBVDSS RDSON ID30V 46A9.5mGreen Device AvailableSuper Low Gate

 9.1. Size:527K  1
 msk50p03nf.pdf

MSK50N03DF MSK50N03DF

www.msksemi.comMSK50P03NFSemiconductorCompianceDescriptionThe MSK50P03NF uses advanced trench technologyexcellent RDS(ON), low gate charge and operation with gatevoltages as low as 4.5V. This device is suitable foruse as aload switch or in PWM applications.General FeaturesVDS = -30V,ID = -50ARDS(ON)

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History: HGI750N15ML | HSU90N02 | SRT15N090HTC

 

 
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