MSK60N03DF MOSFET. Datasheet pdf. Equivalent
Type Designator: MSK60N03DF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 59 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 267 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: DFN3X3-8L
MSK60N03DF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MSK60N03DF Datasheet (PDF)
msk60n03df.pdf
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www.msksemi.comMSK60N03DFSemiconductorCompianceDescriptionThe MSK60N03DF uses advanced trench technology D D D Dto provide excellent RDS(ON), low gate charge andoperation with gate voltages as low as 4.5V. Thisdevice is suitable for use as aS S S GBattery protection or in other Switching application.General Features DFN3X3-8LVDS = 30V ID =60 ARDS(ON)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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