MSK60N03DF PDF and Equivalents Search

 

MSK60N03DF Specs and Replacement

Type Designator: MSK60N03DF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 59 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 267 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: DFN3X3-8L

MSK60N03DF substitution

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MSK60N03DF datasheet

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 msk60n03df.pdf pdf_icon

MSK60N03DF

www.msksemi.com MSK60N03DF Semiconductor Compiance Description The MSK60N03DF uses advanced trench technology D D D D to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a S S S G Battery protection or in other Switching application. General Features DFN3X3-8L VDS = 30V ID =60 A RDS(ON) ... See More ⇒

Detailed specifications: MSJAC11N65Y-TP, MSK100N03DF, MSK20P80GNF, MSK30N03DF, MSK30P02DF, MSK3419DF, MSK50N03DF, MSK50P03NF, CS150N03A8, MSK7804, MSK80N03NF, NTMFD5875NLT1G, NTMFD5C466NLT1G, NTMFD5C466NT1G, NTMFD5C470NLT1G, NTMFD5C650NLT1G, NTMFD5C674NLT1G

Keywords - MSK60N03DF MOSFET specs

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