FDP090N10 Specs and Replacement
Type Designator: FDP090N10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO220
FDP090N10 substitution
- MOSFET ⓘ Cross-Reference Search
FDP090N10 datasheet
fdp090n10.pdf
January 2008 FDP090N10 tm N-Channel PowerTrench MOSFET 100V, 75A, 9m Features General Description RDS(on) = 7.2m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semicon- ductor s advanced PowerTrench process that has been espe- Fast switching speed cially tailored to minimize the on-state resistance and yet maintain superior switchin... See More ⇒
fdp090n10.pdf
isc N-Channel MOSFET Transistor FDP090N10 FEATURES Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 9m (Max) DS(on) High power and current handling capability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switch-Mode and Resonant-Mode Power Supplies DC-DC Con... See More ⇒
Detailed specifications: FDP050AN06A0, FDP054N10, STM4633, FDP060AN08A0, FDP075N15AF102, FDP083N15AF102, FDP085N10AF102, STM4615, 60N06, STM4605, FDP100N10, STM4550, FDP10N60NZ, STM4532, FDP120N10, STM4470E, FDP12N50
Keywords - FDP090N10 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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