FDP090N10 MOSFET. Datasheet pdf. Equivalent
Type Designator: FDP090N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 75 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 89 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO220
FDP090N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDP090N10 Datasheet (PDF)
fdp090n10.pdf
January 2008FDP090N10tmN-Channel PowerTrench MOSFET 100V, 75A, 9mFeatures General Description RDS(on) = 7.2m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semicon-ductors advanced PowerTrench process that has been espe- Fast switching speed cially tailored to minimize the on-state resistance and yet maintain superior switchin
fdp090n10.pdf
isc N-Channel MOSFET Transistor FDP090N10FEATURESDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 9m(Max)DS(on)High power and current handling capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch-Mode and Resonant-Mode Power SuppliesDC-DC Con
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