All MOSFET. FDP090N10 Datasheet

 

FDP090N10 Datasheet and Replacement


   Type Designator: FDP090N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO220
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FDP090N10 Datasheet (PDF)

 ..1. Size:593K  fairchild semi
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FDP090N10

January 2008FDP090N10tmN-Channel PowerTrench MOSFET 100V, 75A, 9mFeatures General Description RDS(on) = 7.2m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semicon-ductors advanced PowerTrench process that has been espe- Fast switching speed cially tailored to minimize the on-state resistance and yet maintain superior switchin

 ..2. Size:252K  inchange semiconductor
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FDP090N10

isc N-Channel MOSFET Transistor FDP090N10FEATURESDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 9m(Max)DS(on)High power and current handling capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch-Mode and Resonant-Mode Power SuppliesDC-DC Con

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History: WMM11N80M3 | FDMS9620S | AM2314NE | RFP2N10L | IRFI7536G

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