NTMFS6H818NLT1G MOSFET Datasheet: N-Ch, 80V, 135A. Full specification with pinout and replacement list

NTMFS6H818NLT1G Specs and Replacement

   Type Designator: NTMFS6H818NLT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 135 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 106 nS
   Cossⓘ - Output Capacitance: 484 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
   Package: DFN5

NTMFS6H818NLT1G substitution

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NTMFS6H818NLT1G datasheet

0.1. Size:176K 1
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MOSFET - Power, Single N-Channel 80 V, 3.2 mW, 135 A NTMFS6H818NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 3.2 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) ... See More ⇒

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3.1. Size:177K onsemi
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NTMFS6H818N MOSFET Power, Single, N-Channel 80 V, 3.7 mW, 123 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 80 V 3.7 mW @ 10 V 123 A MAXIMUM RATINGS (TJ = 25 C unless other... See More ⇒

Detailed specifications: NTMFS5C670NT1G , NTMFS5C673NLT1G , NTMFS5C673NT1G , NTMFS5H425NLT1G , NTMFS6B05NT1G , NTMFS6B05NT3G , NTMFS6B14NT3G , NTMFS6H801NT1G , IRF640 , NTMFS6H836NLT1G , NTMFS6H848NLT1G , NTMFS6H852NLT1G , NTTFS4C05NTAG , NTTFS4C10NTAG , NTTFS4C25NTAG , NTTFS5C454NLTAG , NVMFD024N06CT1G .