NTMFS6H818NLT1G
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTMFS6H818NLT1G
Marking Code: 6H818L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 140
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 135
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 64
nC
trⓘ - Rise Time: 106
nS
Cossⓘ -
Output Capacitance: 484
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0032
Ohm
Package:
DFN5
NTMFS6H818NLT1G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTMFS6H818NLT1G
Datasheet (PDF)
0.1. Size:176K 1
ntmfs6h818nlt1g.pdf
MOSFET - Power, SingleN-Channel80 V, 3.2 mW, 135 ANTMFS6H818NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAX3.2 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)
2.1. Size:176K onsemi
ntmfs6h818nl.pdf
MOSFET - Power, SingleN-Channel80 V, 3.2 mW, 135 ANTMFS6H818NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAX3.2 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)
3.1. Size:177K onsemi
ntmfs6h818n.pdf
NTMFS6H818NMOSFET Power, Single,N-Channel80 V, 3.7 mW, 123 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant80 V 3.7 mW @ 10 V 123 AMAXIMUM RATINGS (TJ = 25C unless other
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