All MOSFET. NTMFS6H818NLT1G Datasheet

 

NTMFS6H818NLT1G Datasheet and Replacement


   Type Designator: NTMFS6H818NLT1G
   Marking Code: 6H818L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 135 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 64 nC
   tr ⓘ - Rise Time: 106 nS
   Cossⓘ - Output Capacitance: 484 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
   Package: DFN5
 

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NTMFS6H818NLT1G Datasheet (PDF)

 0.1. Size:176K  1
 ntmfs6h818nlt1g.pdf pdf_icon

NTMFS6H818NLT1G

MOSFET - Power, SingleN-Channel80 V, 3.2 mW, 135 ANTMFS6H818NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAX3.2 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)

 2.1. Size:176K  onsemi
 ntmfs6h818nl.pdf pdf_icon

NTMFS6H818NLT1G

MOSFET - Power, SingleN-Channel80 V, 3.2 mW, 135 ANTMFS6H818NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAX3.2 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)

 3.1. Size:177K  onsemi
 ntmfs6h818n.pdf pdf_icon

NTMFS6H818NLT1G

NTMFS6H818NMOSFET Power, Single,N-Channel80 V, 3.7 mW, 123 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant80 V 3.7 mW @ 10 V 123 AMAXIMUM RATINGS (TJ = 25C unless other

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