All MOSFET. NVMFD024N06CT1G Datasheet

 

NVMFD024N06CT1G Datasheet and Replacement


   Type Designator: NVMFD024N06CT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 24 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 1.3 nS
   Cossⓘ - Output Capacitance: 225 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0226 Ohm
   Package: DFN8-5X6
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NVMFD024N06CT1G Datasheet (PDF)

 0.1. Size:229K  1
 nvmfd024n06ct1g.pdf pdf_icon

NVMFD024N06CT1G

MOSFET Power, DualN-Channel, SO-8FL60 V, 22.6 mW, 24 ANVMFD024N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWD024N06C - Wettable Flank Option for Enhanced Optical60 V 22.6 mW @ 10 V 24 AInspection AEC-Q101

 2.1. Size:229K  onsemi
 nvmfd024n06c.pdf pdf_icon

NVMFD024N06CT1G

MOSFET Power, DualN-Channel, SO-8FL60 V, 22.6 mW, 24 ANVMFD024N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWD024N06C - Wettable Flank Option for Enhanced Optical60 V 22.6 mW @ 10 V 24 AInspection AEC-Q101

 7.1. Size:224K  onsemi
 nvmfd020n06c.pdf pdf_icon

NVMFD024N06CT1G

MOSFET - Power, DualN-Channel, DUAL SO8FL60 V, 20.3 mW, 27 ANVMFD020N06CFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWD020N06C - Wettable Flank Option for Enhanced OpticalInspection60 V 20.3 mW @ 10 V 27 A AEC-Q1

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History: HGK019NE6A | 2SK2229 | 2SK3089 | ASDM30P11TD-R | WSF20N20 | MTB60B06Q8 | IRF530NPBF

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