NVMFD024N06CT1G MOSFET. Datasheet pdf. Equivalent
Type Designator: NVMFD024N06CT1G
Marking Code: 24DN6C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 24 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 5.7 nC
trⓘ - Rise Time: 1.3 nS
Cossⓘ - Output Capacitance: 225 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0226 Ohm
Package: DFN8-5X6
NVMFD024N06CT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NVMFD024N06CT1G Datasheet (PDF)
nvmfd024n06ct1g.pdf
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MOSFET Power, DualN-Channel, SO-8FL60 V, 22.6 mW, 24 ANVMFD024N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWD024N06C - Wettable Flank Option for Enhanced Optical60 V 22.6 mW @ 10 V 24 AInspection AEC-Q101
nvmfd024n06c.pdf
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MOSFET Power, DualN-Channel, SO-8FL60 V, 22.6 mW, 24 ANVMFD024N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWD024N06C - Wettable Flank Option for Enhanced Optical60 V 22.6 mW @ 10 V 24 AInspection AEC-Q101
nvmfd020n06c.pdf
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MOSFET - Power, DualN-Channel, DUAL SO8FL60 V, 20.3 mW, 27 ANVMFD020N06CFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWD020N06C - Wettable Flank Option for Enhanced OpticalInspection60 V 20.3 mW @ 10 V 27 A AEC-Q1
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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