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PK6A4BA Specs and Replacement


   Type Designator: PK6A4BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 37 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 118 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: PDFN5X6P
 

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PK6A4BA datasheet

 ..1. Size:248K  1
 pk6a4ba.pdf pdf_icon

PK6A4BA

PK6A4BA N-Channel Enhancement Mode NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free D D D D D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 40V 10.5m 37A G. GATE D. DRAIN S. SOURCE #1 S S S G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 40 V Gate-Source Voltage ... See More ⇒

 ..2. Size:247K  niko-sem
 pk6a4ba.pdf pdf_icon

PK6A4BA

PK6A4BA N-Channel Enhancement Mode NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free D D D D D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 40V 10.5m 37A G. GATE D. DRAIN S. SOURCE #1 S S S G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 40 V Gate-Source Voltage ... See More ⇒

Detailed specifications: NTTFS4C05NTAG , NTTFS4C10NTAG , NTTFS4C25NTAG , NTTFS5C454NLTAG , NVMFD024N06CT1G , NVMFD5483NLT1G , NVMFD5485NLT1G , PE5E4BA , 2N7000 , PKC26BB , SCDP120R040NP4B , STS65R190FS2 , STS65R190L8AS2TR , STS65R190SS2 , STS65R190SS2TR , STS65R190TS2 , STS65R280DS2TR .

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