SCDP120R040NP4B Specs and Replacement
Type Designator: SCDP120R040NP4B
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 357 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 66 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 102 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0535 Ohm
Package: TO247-4L
SCDP120R040NP4B substitution
- MOSFET ⓘ Cross-Reference Search
SCDP120R040NP4B datasheet
scdp120r040np4b.pdf
SCDP120R040NP4B 40m 1200V MOS 1 SCDP120R040NP4B N MOSFET 1. Drain 2. Power Source 3. Driver Source 4 4. Gate ... See More ⇒
Detailed specifications: NTTFS4C25NTAG, NTTFS5C454NLTAG, NVMFD024N06CT1G, NVMFD5483NLT1G, NVMFD5485NLT1G, PE5E4BA, PK6A4BA, PKC26BB, 8205A, STS65R190FS2, STS65R190L8AS2TR, STS65R190SS2, STS65R190SS2TR, STS65R190TS2, STS65R280DS2TR, STS65R280FS2, STS65R580DS2TR
Keywords - SCDP120R040NP4B MOSFET specs
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SCDP120R040NP4B replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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