SCDP120R040NP4B Datasheet and Replacement
Type Designator: SCDP120R040NP4B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 357 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 66 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 102 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0535 Ohm
Package: TO247-4L
SCDP120R040NP4B substitution
SCDP120R040NP4B Datasheet (PDF)
scdp120r040np4b.pdf
SCDP120R040NP4B 40m1200V MOS 1SCDP120R040NP4B N MOSFET 1. Drain 2. Power Source 3. Driver Source 4 4. Gate
Datasheet: NTTFS4C25NTAG , NTTFS5C454NLTAG , NVMFD024N06CT1G , NVMFD5483NLT1G , NVMFD5485NLT1G , PE5E4BA , PK6A4BA , PKC26BB , 2SK3878 , STS65R190FS2 , STS65R190L8AS2TR , STS65R190SS2 , STS65R190SS2TR , STS65R190TS2 , STS65R280DS2TR , STS65R280FS2 , STS65R580DS2TR .
History: SLF60R080SS
Keywords - SCDP120R040NP4B MOSFET datasheet
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SCDP120R040NP4B substitution
SCDP120R040NP4B replacement
History: SLF60R080SS
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