STS65R280DS2TR Datasheet and Replacement
Type Designator: STS65R280DS2TR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 37 nS
Cossⓘ - Output Capacitance: 38 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO252
STS65R280DS2TR substitution
STS65R280DS2TR Datasheet (PDF)
sts65r280ds2tr sts65r280fs2.pdf
STS65R280D(F)S2 14A650V MOS 2STS65R280D(F)S2 N MOSFET MOS 1 STS65R280D(F)S2 /3
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STS65R580D(F)(S)(MJ)S2 8A, 650V MOS 2STS65R580D(F)(S)(MJ)S2 N MOSFET MOS 1 13STS65R580D(F)(S)(MJ)S2
Datasheet: PK6A4BA , PKC26BB , SCDP120R040NP4B , STS65R190FS2 , STS65R190L8AS2TR , STS65R190SS2 , STS65R190SS2TR , STS65R190TS2 , 8205A , STS65R280FS2 , STS65R580DS2TR , STS65R580FS2 , STS65R580MJS2 , STS65R580SS2 , STS65R580SS2TR , SVD1055SA , SVD3205STR .
History: SRC60R078BS2 | 2N3386 | SRC60R017FB | IXFA230N075T2 | FQA90N08 | FDB86360F085 | SK50N06A
Keywords - STS65R280DS2TR MOSFET datasheet
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History: SRC60R078BS2 | 2N3386 | SRC60R017FB | IXFA230N075T2 | FQA90N08 | FDB86360F085 | SK50N06A
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