SVD640S Specs and Replacement
Type Designator: SVD640S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 47 nS
Cossⓘ - Output Capacitance: 160 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TO263
SVD640S substitution
- MOSFET ⓘ Cross-Reference Search
SVD640S datasheet
svd640t svd640d svd640f.pdf
SVD640T/D/F 18A 200V N SVD640T/D/F N MOS S-RinTM VDMOS AC-DC ... See More ⇒
Detailed specifications: STS65R580MJS2, STS65R580SS2, STS65R580SS2TR, SVD1055SA, SVD3205STR, SVD540DTR, SVD540F, SVD640DTR, K4145, SVD640STR, SVDP2353PL3A, SVDZ24NDTR, SVF10N60CAFJ, SVF10N60CFJ, SVF10N60STR, SVF10N65CA, SVF10N65CF
Keywords - SVD640S MOSFET specs
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