SVD640S MOSFET. Datasheet pdf. Equivalent
Type Designator: SVD640S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 41 nC
trⓘ - Rise Time: 47 nS
Cossⓘ - Output Capacitance: 160 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TO263
SVD640S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVD640S Datasheet (PDF)
svd640t svd640d svd640dtr svd640s svd640str.pdf
SVD640T/D/S 18A200V N 2SVD640T/D/S N MOS S-RinTM VDMOS .13. 1. 2. 3.
svd640t svd640d svd640f.pdf
SVD640T/D/F 18A200V N SVD640T/D/F N MOS S-RinTM VDMOS AC-DC
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: APM4053PU | HGP058N08SL | APM4420 | BSZ0506NS | JCS13N90ABA | HGS054NE4SL
History: APM4053PU | HGP058N08SL | APM4420 | BSZ0506NS | JCS13N90ABA | HGS054NE4SL
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