SVF12N60STR MOSFET. Datasheet pdf. Equivalent
Type Designator: SVF12N60STR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 34 nC
Rise Time (tr): 52 nS
Drain-Source Capacitance (Cd): 152 pF
Maximum Drain-Source On-State Resistance (Rds): 0.75 Ohm
Package: TO263
SVF12N60STR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVF12N60STR Datasheet (PDF)
..1. Size:366K silan
svf12n60f svf12n60s svf12n60str svf12n60k.pdf
svf12n60f svf12n60s svf12n60str svf12n60k.pdf
SVF12N60F/S/K 12A600V N 2SVF12N60F/S/K N MOS F-CellTM VDMOS 13 1. 2. 3
5.1. Size:459K silan
svf12n60t svf12n60f svf12n60s svf12n60k.pdf
svf12n60t svf12n60f svf12n60s svf12n60k.pdf
SVF12N60T/F/S/K 12A600V N SVF12N60T/F/S/K N MOS F-CellTM VDMOS AC-DC
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
