SVF31N30CS MOSFET. Datasheet pdf. Equivalent
Type Designator: SVF31N30CS
Marking Code: 31N30C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 284 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 31 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 53 nC
trⓘ - Rise Time: 77 nS
Cossⓘ - Output Capacitance: 346 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: TO263
SVF31N30CS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVF31N30CS Datasheet (PDF)
svf31n30cs svf31n30cstr.pdf
SVF31N30CS 31A, 300V N 2SVF31N30CS N MOS F-CellTM VDMOS 13
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IRF9Z14L
History: IRF9Z14L
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918