SVF4N60CAFJ Datasheet and Replacement
Type Designator: SVF4N60CAFJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 55 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: TO220F
SVF4N60CAFJ substitution
SVF4N60CAFJ Datasheet (PDF)
svf4n60cafj.pdf
SVF4N60CAFJ 4A600V N 2SVF4N60CAFJ N MOS 1 F-CellTM VDMOS 3 1. 2.
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SVF4N60CAF/K/D/T/MN/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switc
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SVF4N60CAF/K/D/T/MN/MJ 4A600V N 2 SVF4N60CAF/K/D/T/MN/MJ N MOS 13 F-CellTM VDMOS 1TO-252-2L3
svf4n60caf svf4n60cak svf4n60cad svf4n60cat svf4n60camn svf4n60camj.pdf
SVF4N60CAF/K/D/T/MN/MJ 4A600V N SVF4N60CAF/K/D/T/MN/MJ N MOS F-CellTM VDMOS
Datasheet: SVF31N30CSTR , SVF3878AP7 , SVF3878P7 , SVF3N65VFJ , SVF4N150F , SVF4N150P7 , SVF4N150PF , SVF4N60CADTR , RU7088R , SVF4N60DTR , SVF4N65CADTR , SVF4N65CAFJH , SVF4N65CF , SVF4N65CMJ , SVF4N65DTR , SVF4N65MJ , SVF4N65RDTR .
History: BSZ039N06NS | SIHFP360
Keywords - SVF4N60CAFJ MOSFET datasheet
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History: BSZ039N06NS | SIHFP360
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