SVF4N65CMJ Datasheet. Specs and Replacement
Type Designator: SVF4N65CMJ 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 77 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
Package: TO251
SVF4N65CMJ substitution
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SVF4N65CMJ datasheet
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SVF4N65CAF/D/M/MJ/MN/K 4A 650V N 2 SVF4N65CAF/D/M/MJ/MN/K N MOS 1 F-CellTM VDMOS 3 1. 2. 3... See More ⇒
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SVF4N65CAF/D/M/MJ/MN/K 4A 650V N 2 SVF4N65CAF/D/M/MJ/MN/K N MOS F-CellTM VDMOS 1 3 1.... See More ⇒
Detailed specifications: SVF4N150P7, SVF4N150PF, SVF4N60CADTR, SVF4N60CAFJ, SVF4N60DTR, SVF4N65CADTR, SVF4N65CAFJH, SVF4N65CF, IRFB7545, SVF4N65DTR, SVF4N65MJ, SVF4N65RDTR, SVF4N70DTR, SVF4N70F, SVF4N70MJ, SVF5N60DTR, SVF5N65DTR
Keywords - SVF4N65CMJ MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
