SVF6N25CD Datasheet. Specs and Replacement
Type Designator: SVF6N25CD 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 68 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO252
SVF6N25CD substitution
- MOSFET ⓘ Cross-Reference Search
SVF6N25CD datasheet
svf6n60f svf6n60dtr svf6n60fq.pdf
SVF6N60F/D/FQ 6A 600V N 2 SVF6N60F/D/FQ N MOS F-CellTM VDMOS 1 1 3 TO-252-2L 3 ... See More ⇒
Detailed specifications: SVF4N65DTR, SVF4N65MJ, SVF4N65RDTR, SVF4N70DTR, SVF4N70F, SVF4N70MJ, SVF5N60DTR, SVF5N65DTR, IRFP064N, SVF6N60DTR, SVF6N60FQ, SVF6N70DTR, SVF6N70K, SVF6N70MJG, SVF6N70MN, SVF6N80DTR, SVF6N80K
Keywords - SVF6N25CD MOSFET specs
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