SVF8NN70FJ MOSFET. Datasheet pdf. Equivalent

   Type Designator: SVF8NN70FJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 28 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 124 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO220F

SVF8NN70FJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SVF8NN70FJ Datasheet (PDF)

..1. Size:368K silan
svf8n70f svf8n70k svf8nn70fj.pdf

SVF8N70F/K/FJ 8A700V N 2SVF8N70F/K/FJ N MOS F-CellTM VDMOS 13 1. 2.

9.1. Size:312K silan
svf8n70fjh.pdf

SVF8N70FJH 8A700V N 2SVF8N70FJH N MOS F-CellTM VDMOS 13 1. 2.

9.2. Size:384K silan
svf8n65rmj svf8n65rdtr.pdf

SVF8N65RD(MJ) 8A650V N SVF8N65RD(MJ) N MOS 2 F-CellTM VDMOS 1

9.3. Size:433K silan
svf8n60t svf8n60f.pdf

SVF8N60T/F_Datasheet 8A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF8N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryF-CellTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching

9.4. Size:336K silan
svf8n60f.pdf