SVF8NN70FJ Datasheet. Specs and Replacement
Type Designator: SVF8NN70FJ 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 124 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO220F
SVF8NN70FJ substitution
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SVF8NN70FJ datasheet
svf8n70fjh.pdf
SVF8N70FJH 8A 700V N 2 SVF8N70FJH N MOS F-CellTM VDMOS 1 3 1. 2. ... See More ⇒
svf8n65rmj svf8n65rdtr.pdf
SVF8N65RD(MJ) 8A 650V N SVF8N65RD(MJ) N MOS 2 F-CellTM VDMOS 1 ... See More ⇒
svf8n60t svf8n60f.pdf
SVF8N60T/F_Datasheet 8A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF8N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching ... See More ⇒
Detailed specifications: SVF7N80FD, SVF7N80K, SVF7N80KL, SVF8N65RDTR, SVF8N65RMJ, SVF8N70F, SVF8N70FJH, SVF8N70K, 2N7000, SVF9N90F, SVFP10N60CFJD, SVFP12N60CFJD, SVFP12N65CFJD, SVFP14N60CFJ, SVFP14N60CFJD, SVFP14N65CFJD, SVFP18N60FJD
Keywords - SVF8NN70FJ MOSFET specs
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