All MOSFET. SVF8NN70FJ Datasheet

 

SVF8NN70FJ Datasheet and Replacement


   Type Designator: SVF8NN70FJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 124 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO220F
 

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SVF8NN70FJ Datasheet (PDF)

 ..1. Size:368K  silan
 svf8n70f svf8n70k svf8nn70fj.pdf pdf_icon

SVF8NN70FJ

SVF8N70F/K/FJ 8A700V N 2SVF8N70F/K/FJ N MOS F-CellTM VDMOS 13 1. 2.

 9.1. Size:312K  silan
 svf8n70fjh.pdf pdf_icon

SVF8NN70FJ

SVF8N70FJH 8A700V N 2SVF8N70FJH N MOS F-CellTM VDMOS 13 1. 2.

 9.2. Size:384K  silan
 svf8n65rmj svf8n65rdtr.pdf pdf_icon

SVF8NN70FJ

SVF8N65RD(MJ) 8A650V N SVF8N65RD(MJ) N MOS 2 F-CellTM VDMOS 1

 9.3. Size:433K  silan
 svf8n60t svf8n60f.pdf pdf_icon

SVF8NN70FJ

SVF8N60T/F_Datasheet 8A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF8N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryF-CellTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching

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Datasheet: SVF7N80FD , SVF7N80K , SVF7N80KL , SVF8N65RDTR , SVF8N65RMJ , SVF8N70F , SVF8N70FJH , SVF8N70K , IRF9540 , SVF9N90F , SVFP10N60CFJD , SVFP12N60CFJD , SVFP12N65CFJD , SVFP14N60CFJ , SVFP14N60CFJD , SVFP14N65CFJD , SVFP18N60FJD .

History: EM6K34

Keywords - SVF8NN70FJ MOSFET datasheet

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