All MOSFET. SVFP10N60CFJD Datasheet

 

SVFP10N60CFJD Datasheet and Replacement


   Type Designator: SVFP10N60CFJD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 143 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO220F
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SVFP10N60CFJD Datasheet (PDF)

 ..1. Size:321K  silan
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SVFP10N60CFJD

SVFP10N60CFJD 10A600V N 2SVFP10N60CFJD N MOS F-CellTM VDMOS 1 3

 9.1. Size:321K  silan
 svfp14n60cfjd.pdf pdf_icon

SVFP10N60CFJD

SVFP14N60CFJD 14A600V N 2SVFP14N60CFJD N MOS F-CellTM VDMOS 1 3

 9.2. Size:319K  silan
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SVFP10N60CFJD

SVFP18N60FJD 18A, 600V N 2SVFP18N60FJD N MOS F-CellTM VDMOS 1 3

 9.3. Size:318K  silan
 svfp14n60cfj.pdf pdf_icon

SVFP10N60CFJD

SVFP14N60CFJ 14A600V N 2SVFP14N60CFJ N MOS F-CellTM VDMOS 13 1. 2.

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History: APM7328K | IRFW630B | FCP11N60N | FMR11N90E

Keywords - SVFP10N60CFJD MOSFET datasheet

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