SVFP12N65CFJD Datasheet and Replacement
Type Designator: SVFP12N65CFJD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 51 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 156 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO220F
- MOSFET Cross-Reference Search
SVFP12N65CFJD Datasheet (PDF)
svfp12n65cfjd.pdf
SVFP12N65CFJD 12A650V N 2SVFP12N65CFJD N MOS F-CellTM VDMOS 1 3
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SVFP14N60CFJD 14A600V N 2SVFP14N60CFJD N MOS F-CellTM VDMOS 1 3
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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 2N65L | RW1C020UN | IRF441 | AP9926GEO | GSM3050S | QM6016F | STD4N62K3
Keywords - SVFP12N65CFJD MOSFET datasheet
SVFP12N65CFJD cross reference
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History: 2N65L | RW1C020UN | IRF441 | AP9926GEO | GSM3050S | QM6016F | STD4N62K3
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