SVG069R5NT Datasheet. Specs and Replacement
Type Designator: SVG069R5NT 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 54 nS
Cossⓘ - Output Capacitance: 432 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
Package: TO220
SVG069R5NT substitution
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SVG069R5NT datasheet
svg069r5ndtr svg069r5nmj svg069r5nt.pdf
SVG069R5ND(MJ)(T) 60A 60V N 2 SVG069R5ND(MJ)(T) N MOS LVMOS 1 1 3 ... See More ⇒
Detailed specifications: SVG041R7NL5, SVG042R1NL5, SVG042R5NL5, SVG062R8NL5, SVG063R5NL5, SVG066R5NSA, SVG069R5NDTR, SVG069R5NMJ, STP80NF70, SVG075R5NT, SVG076R5NDTR, SVG076R5NKL, SVG076R5NS, SVG076R5NSTR, SVG076R5NT, SVG083R4NP7, SVG083R4NS
Keywords - SVG069R5NT MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: IXFN32N80P
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