SVG083R4NP7 MOSFET. Datasheet pdf. Equivalent
Type Designator: SVG083R4NP7
Marking Code: 083R4NP7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 227 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 94 nC
trⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 925 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
Package: TO247
SVG083R4NP7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVG083R4NP7 Datasheet (PDF)
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SVG083R4NT(S)(P7) 120A80V N 2 SVG083R4NT(S)(P7) N MOS LVMOS 11 3
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SVG083R6NAL5 138A80V N S D1SVG083R6NAL5 N MOS 8 LVMOS S D2 7 DS 3 6
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SVG086R0NT(S)(D)(L5) 120A80V N 2S D1 8SVG086R0NT(S)(D)(L5) N MOS S 2 7 D1 LVMOS DS 3 6G 4 5 D 3
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
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